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RENESAS ISL6210CRZ

제조업체
제조사 품번
ISL6210CRZ
LCSC 번호
C3654916
포장
QFN-16(4x4)
고객 번호
주요 제원
4.5V~5.5V 4A 2A QFN-16(4x4) Gate Drivers RoHS
데이터시트RENESAS ISL6210CRZ
모든 주문 보장
100% 정품 · 30일 반품 또는 교환
품절
재입고 알림
최소값: 1배수: 1판매 단위: Piece
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수량단가(참고용)총액
1+$ 2.2197$ 2.22
200+$ 0.8592$ 171.84
500+$ 0.8284$ 414.20
1,000+$ 0.8145$ 814.50
표준 패키지75/Full Tube
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제품 사양

전체
타입설명
카테고리Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
제조업체RENESAS
포장QFN-16(4x4)
Input Logic Level - Low3.4V~3.98V
Low Level Delay Time-
High Level Delay Time-
Quiescent Current170uA
Input Logic Level - High1.08V~1.5V
Voltage - Supply4.5V~5.5V
Driven ConfigurationHalf-Bridge
Operating Temperature-10℃~+100℃
Current - Output Low(IOL)4A
Rise Time8ns
Fall Time4ns
FeaturesEnable shutdown;Dead-time control;Interleaved conduction protection;Built-in bootstrap diode
Current - Output High(IOH)2A
Load TypeMOSFET
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개요

AI 번역

The ISL6210 integrates two ISL6208A drivers and is optimized to drive two independent power channels in a synchronous-rectified buck converter topology. These drivers combined with an Intersil ISL62xx multiphase PWM controller forms a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors. The IC is biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented via an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6210 features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. The ISL6210 also features an input that recognizes a high impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that may be utilized in a power system to protect the load from negative output voltage damage. Designed for speed, the ISL6210 dual MOSFET driver controls both high-side and low-side N-Channel FETs for two separate channels of a Multiphase PWM system from two independent PWM signals.

주요 특징

AI 번역
  • 5V Quad N-Channel MOSFET Drives for Two Synchronous Rectified Bridges
  • Adaptive Shoot-Through Protection - Active Gate Threshold Monitoring - Programmable Dead-Time
  • 0.4Ω ON-Resistance and 4A Sink Current Capability
  • Supports High Switching Frequency - Fast Output Rise and Fall - Ultra Low Three-State Hold-Off Time (20ns)
  • Low VF Internal Bootstrap Diode
  • Low Bias Supply Current
  • Power-On Reset
  • QFN Package - Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat No Leads-Product Outline - Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
  • Pb-Free Available (RoHS Compliant)

응용 분야

AI 번역
  • Core Voltage Supplies for Inte and AMD Microprocessors
  • High Frequency Low Profile High Efficiency DC/DC Converters
  • High Current Low Voltage DC/DC Converters
  • Synchronous Rectification for Isolated Power Supplies