MDD(Microdiode Semiconductor) MB10F

Fabricant	MDD(Microdiode Semiconductor)Asian Brands
Réf. Fab.	MB10F
Réf. LCSC	C3589641
Condit.	MBF
Numéro Client
Caract. clés	35A 1.1V@500mA 1A 1kV MBF Bridge Rectifiers RoHS
Fiche Technique	MDD(Microdiode Semiconductor) MB10F
Conformité RoHS	1 documents disponibles
Pièces alternatives	3

Spécifications du Produit

Tout

Type	Description
Catégorie	Discrete Semiconductors/Diodes/Bridge Rectifiers
Fabricant	MDD(Microdiode Semiconductor)
Condit.	MBF
Non-Repetitive Peak Forward Surge Current	35A
Operating Junction Temperature Range	-55℃~+150℃
Reverse Leakage Current (Ir)	5uA@1kV
Voltage - Forward(Vf@If)	1.1V@500mA
Current - Rectified	1A
Voltage - DC Reverse(Vr)	1kV

Type	Description
Catégorie	Discrete Semiconductors/Diodes/Bridge Rectifiers
Fabricant	MDD(Microdiode Semiconductor)
Condit.	MBF
Non-Repetitive Peak Forward Surge Current	35A
Operating Junction Temperature Range	-55℃~+150℃

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Tout

Type	Description
Catégorie	Discrete Semiconductors/Diodes/Bridge Rectifiers
Fabricant	MDD(Microdiode Semiconductor)
Condit.	MBF
Non-Repetitive Peak Forward Surge Current	35A
Operating Junction Temperature Range	-55℃~+150℃
Reverse Leakage Current (Ir)	5uA@1kV
Voltage - Forward(Vf@If)	1.1V@500mA
Current - Rectified	1A
Voltage - DC Reverse(Vr)	1kV

Type	Description
Catégorie	Discrete Semiconductors/Diodes/Bridge Rectifiers
Fabricant	MDD(Microdiode Semiconductor)
Condit.	MBF
Non-Repetitive Peak Forward Surge Current	35A
Operating Junction Temperature Range	-55℃~+150℃