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onsemi FDS6982

Fabricante
onsemi
Cód. da peça
FDS6982
Nº LCSC
C3289827
Emb.
SOIC-8
Número do Cliente
Atrib. princ.
Dual N-Channel, Current:8.6A, Voltage:30V
Folha de Dadosonsemi FDS6982
Conformidade RoHS3 documentos disponíveis
Peças alternativas5
Garantia em cada pedido
100% Autêntico · Devolução ou Substituição em 30 Dias

Especificações do Produto

Tudo
TipoDescrição
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Fabricanteonsemi
Emb.SOIC-8
Output Capacitance(Coss)420pF;160pF
Ciss-Input Capacitance2.085nF
Pd - Power Dissipation2W
Configuration-
Drain to Source Voltage30V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)8.6A
Reverse Transfer Capacitance (Crss)70pF
RDS(on)35mΩ@4.5V
Number2 N-Channel
Gate Charge(Qg)26nC@5V
Vgs±20V
Gate Threshold Voltage (Vgs(th))3V
TypeN-Channel
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Descrição

Tradução por IA

This device is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide various peripheral voltage rails for notebook computers and other battery-powered electronic devices. The FDS6982 contains two distinct 30V, N-channel, logic-level PowerTrench MOSFETs optimized to maximize power conversion efficiency. The high-side switch (Q1) is specifically designed to minimize switching losses, while the low-side switch (Q2) is optimized for low conduction losses (less than 20mΩ at VGS = 4.5V).

Recursos

Tradução por IA
  • Q2: 8.6A, 30V. RDS(on) = 0.015Ω at VGS = 10V
  • RDS(on) = 0.020Ω at VGS = 4.5V
  • Q1: 6.3A, 30V. RDS(on) = 0.028Ω at VGS = 10V
  • RDS(on) = 0.035Ω at VGS = 4.5V
  • Fast switching speed.
  • High-performance trench technology for ultra-low RDS(ON).

Aplicações

Tradução por IA
  • Battery-powered synchronous DC:DC converter.
  • Embedded DC:DC conversion.