Abbildung ähnlich
EDA-ModelleEasyEDA
MCC MCAC95N065Y-TP
| Hersteller | |
| Herst.-Teilenr. | MCAC95N065Y-TP |
| LCSC-Nr. | C3288283 |
| Verp. | DFN5060 |
| Kundennummer | |
| Hauptmerkm. | N-CHANNEL, Current:95A, Voltage:65V |
| Datenblatt | MCC MCAC95N065Y-TP |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 4 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MCC | |
| Verp. | DFN5060 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 65V | |
| Output Capacitance(Coss) | 1.29nF | |
| Current - Continuous Drain(Id) | 95A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 120W | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 3.4mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 85pF | |
| Gate Charge(Qg) | 81nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MCC | |
| Verp. | DFN5060 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 65V | |
| Output Capacitance(Coss) | 1.29nF | |
| Current - Continuous Drain(Id) | 95A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 120W | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 3.4mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 85pF | |
| Gate Charge(Qg) | 81nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
N-channel enhancement-mode FET utilizing trench MOSFET technology, housed in a leadless medium-power DFN2020MD-6 (SOT1220) SMD plastic package.
Merkmale
KI-Übersetzung
- Split-gate trench MOSFET technology
- Excellent thermal dissipation package
- High-density cell design for low RDS(on)
- Moisture Sensitivity Level 1
- Halogen-free, "green" device
- Epoxy meets UL 94 V-0 flammability rating
- Lead-free finish / RoHS compliant
Anwendungen
KI-Übersetzung
- Relay Drivers - High-Speed Line Drivers - Low-Side Load Switches - Switching Circuits
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.6769 | $ 0.68 |
| 10+ | $ 0.5489 | $ 5.49 |
| 30+ | $ 0.4841 | $ 14.52 |
| 100+ | $ 0.4209 | $ 42.09 |
| 500+ | $ 0.3824 | $ 191.20 |
| 1,000+ | $ 0.3624 | $ 362.40 |
Standardgehäuse5000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MCC | |
| Verp. | DFN5060 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 65V | |
| Output Capacitance(Coss) | 1.29nF | |
| Current - Continuous Drain(Id) | 95A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 120W | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 3.4mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 85pF | |
| Gate Charge(Qg) | 81nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MCC | |
| Verp. | DFN5060 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 65V | |
| Output Capacitance(Coss) | 1.29nF | |
| Current - Continuous Drain(Id) | 95A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 120W | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 3.4mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 85pF | |
| Gate Charge(Qg) | 81nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
N-channel enhancement-mode FET utilizing trench MOSFET technology, housed in a leadless medium-power DFN2020MD-6 (SOT1220) SMD plastic package.
Merkmale
KI-Übersetzung
- Split-gate trench MOSFET technology
- Excellent thermal dissipation package
- High-density cell design for low RDS(on)
- Moisture Sensitivity Level 1
- Halogen-free, "green" device
- Epoxy meets UL 94 V-0 flammability rating
- Lead-free finish / RoHS compliant
Anwendungen
KI-Übersetzung
- Relay Drivers - High-Speed Line Drivers - Low-Side Load Switches - Switching Circuits
C3288283 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| MCAC95N06Y-TP | MCC | DFN5060 | 4,752 | $ 1.272 | ||
| MCACL110N08Y-TP | MCC | DFN5060 | 0 | $ 5.4008 | ||
| MCAC100N08Y-TP | MCC | DFN5060 | 0 | $ 0.7257 | ||
| MCAC100N08YA-TP | MCC | DFN5060 | 0 | $ 0.5816 |