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Modelli EDAEasyEDA
VISHAY IRF610PBF-BE3
| Produttore | |
| Cod. Prod. | IRF610PBF-BE3 |
| Cod. LCSC | C3280782 |
| Imballo | TO-220AB |
| Numero Cliente | |
| Attr. chiave | N-Channel MOSFET, Current:3.3A, Vdss:200V |
| Scheda Tecnica | VISHAY IRF610PBF-BE3 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VISHAY | |
| Imballo | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 3.3A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 36W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 140pF | |
| Gate Charge(Qg) | 8.2nC | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VISHAY | |
| Imballo | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 3.3A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 36W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 140pF | |
| Gate Charge(Qg) | 8.2nC | |
| Type | N-Channel |
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Descrizione
Traduzione AI
The third-generation power MOSFETs offer designers the best combination of fast switching, rugged device design, low on-resistance, and high cost-effectiveness. The TO-220AB package is widely preferred across all commercial and industrial applications at power dissipation levels up to approximately 50 W. Its low thermal resistance and low packaging cost have made the TO-220AB universally recognized throughout the industry.
Caratteristiche
Traduzione AI
- Dynamic dv/dt rated
- Repetitive avalanche rated
- Fast switching
- Easy to parallel
- Simple gate drive requirements
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Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.4323 | $ 0.43 |
| 200+ | $ 0.1673 | $ 33.46 |
| 500+ | $ 0.1614 | $ 80.70 |
| 1,000+ | $ 0.1585 | $ 158.50 |
Package Standard1000/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VISHAY | |
| Imballo | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 3.3A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 36W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 140pF | |
| Gate Charge(Qg) | 8.2nC | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VISHAY | |
| Imballo | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 3.3A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 36W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 140pF | |
| Gate Charge(Qg) | 8.2nC | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The third-generation power MOSFETs offer designers the best combination of fast switching, rugged device design, low on-resistance, and high cost-effectiveness. The TO-220AB package is widely preferred across all commercial and industrial applications at power dissipation levels up to approximately 50 W. Its low thermal resistance and low packaging cost have made the TO-220AB universally recognized throughout the industry.
Caratteristiche
Traduzione AI
- Dynamic dv/dt rated
- Repetitive avalanche rated
- Fast switching
- Easy to parallel
- Simple gate drive requirements
C3280782 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| WGP7N70SE | Wild Goose | Simili | TO-220 | 975 | $ 0.3224 | ||
| 12N65TF | Chongqing Pingwei Tech | Simili | TO-220TF-3 | 3 | $ 0.7559 | ||
| JCS4N60FC | Jilin Sino-Microelectronics | Simili | TO-220MF | 40 | $ 0.3641 | ||
| JCS4N65FB | Jilin Sino-Microelectronics | Simili | TO-220MF | 85 | $ 0.3828 | ||
| JCS9N90FT | Jilin Sino-Microelectronics | Simili | TO-220MF | 990 | $ 0.9963 |
5 altri componenti alternativi.Visualizza tutti i sostituti