MICROCHIP APT36GA60BD15

Fabricante	MICROCHIP
Cód. da peça	APT36GA60BD15
Nº LCSC	C3193672
Emb.	TO-247-3
Número do Cliente
Atrib. princ.	290W 36A 600V PT (Punch-Through) TO-247-3 Single IGBTs RoHS
Folha de Dados	MICROCHIP APT36GA60BD15
Conformidade RoHS	1 documentos disponíveis
Peças alternativas	5

Especificações do Produto

Tudo

Tipo	Descrição
Categoria	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Fabricante	MICROCHIP
Emb.	TO-247-3
Td(off)	122ns;149ns
Pd - Power Dissipation	290W
Td(on)	16ns;14ns
Current - Collector(Ic)	36A
Collector-Emitter Breakdown Voltage (Vces)	600V
Reverse Transfer Capacitance (Cres)	328pF
IGBT Type	PT (Punch-Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.5V
Operating Temperature	-55℃~+150℃
Vce Saturation(VCE(sat))	2V;1.9V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	19ns;105ns;55ns
Switching Energy(Eoff)	254uJ;439uJ
Turn-On Energy (Eon)	307uJ;508uJ
Input Capacitance(Cies)	2.88nF
Output Capacitance(Coes)	226pF
Gate Charge(Qg)	102nC@15V

Tipo	Descrição
Categoria	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Fabricante	MICROCHIP
Emb.	TO-247-3
Td(off)	122ns;149ns
Pd - Power Dissipation	290W
Td(on)	16ns;14ns
Current - Collector(Ic)	36A
Collector-Emitter Breakdown Voltage (Vces)	600V
Reverse Transfer Capacitance (Cres)	328pF
IGBT Type	PT (Punch-Through)

Tipo	Descrição
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.5V
Operating Temperature	-55℃~+150℃
Vce Saturation(VCE(sat))	2V;1.9V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	19ns;105ns;55ns
Switching Energy(Eoff)	254uJ;439uJ
Turn-On Energy (Eon)	307uJ;508uJ
Input Capacitance(Cies)	2.88nF
Output Capacitance(Coes)	226pF
Gate Charge(Qg)	102nC@15V

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Tudo

Tipo	Descrição
Categoria	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Fabricante	MICROCHIP
Emb.	TO-247-3
Td(off)	122ns;149ns
Pd - Power Dissipation	290W
Td(on)	16ns;14ns
Current - Collector(Ic)	36A
Collector-Emitter Breakdown Voltage (Vces)	600V
Reverse Transfer Capacitance (Cres)	328pF
IGBT Type	PT (Punch-Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.5V
Operating Temperature	-55℃~+150℃
Vce Saturation(VCE(sat))	2V;1.9V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	19ns;105ns;55ns
Switching Energy(Eoff)	254uJ;439uJ
Turn-On Energy (Eon)	307uJ;508uJ
Input Capacitance(Cies)	2.88nF
Output Capacitance(Coes)	226pF
Gate Charge(Qg)	102nC@15V

Tipo	Descrição
Categoria	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Fabricante	MICROCHIP
Emb.	TO-247-3
Td(off)	122ns;149ns
Pd - Power Dissipation	290W
Td(on)	16ns;14ns
Current - Collector(Ic)	36A
Collector-Emitter Breakdown Voltage (Vces)	600V
Reverse Transfer Capacitance (Cres)	328pF
IGBT Type	PT (Punch-Through)

Tipo	Descrição
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.5V
Operating Temperature	-55℃~+150℃
Vce Saturation(VCE(sat))	2V;1.9V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	19ns;105ns;55ns
Switching Energy(Eoff)	254uJ;439uJ
Turn-On Energy (Eon)	307uJ;508uJ
Input Capacitance(Cies)	2.88nF
Output Capacitance(Coes)	226pF
Gate Charge(Qg)	102nC@15V