JingYang TNM2K30KX
| Fabricant | JingYangAsian Brands |
| Réf. Fab. | TNM2K30KX |
| Réf. LCSC | C3038096 |
| Condit. | SOT-23 |
| Numéro Client | |
| Caract. clés | MOSFET N-CH 30V 0.3A SOT-23 |
| Fiche Technique | JingYang TNM2K30KX |
| Conformité RoHS | 1 documents disponibles |
| Pièces alternatives | 5 |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | JingYang | |
| Condit. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 300mA | |
| Ciss-Input Capacitance | 42pF | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 2Ω@1.8V | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | JingYang | |
| Condit. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 300mA | |
| Ciss-Input Capacitance | 42pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 2Ω@1.8V | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
- Trench power MOSFET technology
- Low R<sub>DS(on)</sub>
- Low gate charge
- RoHS compliant and halogen-free
Caractéristiques
Traduction par IA
- Low on-resistance
- Fast switching speed
- Low voltage drive makes this device ideal for Portable equipment
- Easily designed drive circuits
- Easy to parallel
Applications
Traduction par IA
- Interfacing
- Switching
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | JingYang | |
| Condit. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 300mA | |
| Ciss-Input Capacitance | 42pF | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 2Ω@1.8V | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | JingYang | |
| Condit. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 300mA | |
| Ciss-Input Capacitance | 42pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 2Ω@1.8V | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
- Trench power MOSFET technology
- Low R<sub>DS(on)</sub>
- Low gate charge
- RoHS compliant and halogen-free
Caractéristiques
Traduction par IA
- Low on-resistance
- Fast switching speed
- Low voltage drive makes this device ideal for Portable equipment
- Easily designed drive circuits
- Easy to parallel
Applications
Traduction par IA
- Interfacing
- Switching
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



