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Modèles EDAEasyEDA
MDD(Microdiode Semiconductor) RMSB20J
| Fabricant | MDD(Microdiode Semiconductor)Asian Brands |
| Réf. Fab. | RMSB20J |
| Réf. LCSC | C2993622 |
| Condit. | UMSB |
| Numéro Client | |
| Caract. clés | 50A 1.3V@2A 2A 600V UMSB Bridge Rectifiers RoHS |
| Fiche Technique | MDD(Microdiode Semiconductor) RMSB20J |
| Conformité RoHS | 1 documents disponibles |
| Pièces alternatives | 5 |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Diodes/Bridge Rectifiers | |
| Fabricant | MDD(Microdiode Semiconductor) | |
| Condit. | UMSB | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - Forward(Vf@If) | 1.3V@2A | |
| Reverse Leakage Current (Ir) | 5uA@600V | |
| Current - Rectified | 2A | |
| Voltage - DC Reverse(Vr) | 600V |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Diodes/Bridge Rectifiers | |
| Fabricant | MDD(Microdiode Semiconductor) | |
| Condit. | UMSB | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Voltage - Forward(Vf@If) | 1.3V@2A | |
| Reverse Leakage Current (Ir) | 5uA@600V | |
| Current - Rectified | 2A | |
| Voltage - DC Reverse(Vr) | 600V |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- Glass passivated chip junction
- Reverse voltage: 100 to 1000V
- Forward current: 2.0A
- Fast reverse recovery time
- Designed for SMT applications
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100% Authentique · Retour ou échange sous 30 Jours
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Diodes/Bridge Rectifiers | |
| Fabricant | MDD(Microdiode Semiconductor) | |
| Condit. | UMSB | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - Forward(Vf@If) | 1.3V@2A | |
| Reverse Leakage Current (Ir) | 5uA@600V | |
| Current - Rectified | 2A | |
| Voltage - DC Reverse(Vr) | 600V |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Diodes/Bridge Rectifiers | |
| Fabricant | MDD(Microdiode Semiconductor) | |
| Condit. | UMSB | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Voltage - Forward(Vf@If) | 1.3V@2A | |
| Reverse Leakage Current (Ir) | 5uA@600V | |
| Current - Rectified | 2A | |
| Voltage - DC Reverse(Vr) | 600V |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- Glass passivated chip junction
- Reverse voltage: 100 to 1000V
- Forward current: 2.0A
- Fast reverse recovery time
- Designed for SMT applications
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8504409190 |
| USHTS | 8504409540 |
| TARIC | 8504409590 |
| CAHTS | 8504409099 |
| BRHTS | 85044090 |
| INHTS | 85044090 |
| MXHTS | 8504.40.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8504409190 |
| USHTS | 8504409540 |
| TARIC | 8504409590 |
| Type | Détails |
|---|---|
| CAHTS | 8504409099 |
| BRHTS | 85044090 |
| INHTS | 85044090 |
| MXHTS | 8504.40.99 |