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MDD(Microdiode Semiconductor) MB36S
| Fabricant | MDD(Microdiode Semiconductor)Asian Brands |
| Réf. Fab. | MB36S |
| Réf. LCSC | C2993509 |
| Condit. | MBS |
| Numéro Client | |
| Caract. clés | 50A 700mV@2A 3A 60V MBS Bridge Rectifiers |
| Fiche Technique | MDD(Microdiode Semiconductor) MB36S |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Diodes/Bridge Rectifiers | |
| Fabricant | MDD(Microdiode Semiconductor) | |
| Condit. | MBS | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Reverse Leakage Current (Ir) | 300uA@60V | |
| Voltage - Forward(Vf@If) | 700mV@2A | |
| Current - Rectified | 3A | |
| Voltage - DC Reverse(Vr) | 60V |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Diodes/Bridge Rectifiers | |
| Fabricant | MDD(Microdiode Semiconductor) | |
| Condit. | MBS | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Operating Junction Temperature Range | -55℃~+125℃ |
| Type | Description | |
|---|---|---|
| Reverse Leakage Current (Ir) | 300uA@60V | |
| Voltage - Forward(Vf@If) | 700mV@2A | |
| Current - Rectified | 3A | |
| Voltage - DC Reverse(Vr) | 60V |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- Reverse voltage: 40 ~ 200 V
- Forward current: 3.0 A
- High surge current capability
- Designed for SMT applications
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Diodes/Bridge Rectifiers | |
| Fabricant | MDD(Microdiode Semiconductor) | |
| Condit. | MBS | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Reverse Leakage Current (Ir) | 300uA@60V | |
| Voltage - Forward(Vf@If) | 700mV@2A | |
| Current - Rectified | 3A | |
| Voltage - DC Reverse(Vr) | 60V |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Diodes/Bridge Rectifiers | |
| Fabricant | MDD(Microdiode Semiconductor) | |
| Condit. | MBS | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Operating Junction Temperature Range | -55℃~+125℃ |
| Type | Description | |
|---|---|---|
| Reverse Leakage Current (Ir) | 300uA@60V | |
| Voltage - Forward(Vf@If) | 700mV@2A | |
| Current - Rectified | 3A | |
| Voltage - DC Reverse(Vr) | 60V |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- Reverse voltage: 40 ~ 200 V
- Forward current: 3.0 A
- High surge current capability
- Designed for SMT applications
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| ECCN | - |
| CNHTS | 8504409190 |
| USHTS | 8504409540 |
| TARIC | 8504409590 |
| CAHTS | 8504409099 |
| BRHTS | 85044090 |
| INHTS | 85044090 |
| MXHTS | 8504.40.99 |
| Type | Détails |
|---|---|
| ECCN | - |
| CNHTS | 8504409190 |
| USHTS | 8504409540 |
| TARIC | 8504409590 |
| Type | Détails |
|---|---|
| CAHTS | 8504409099 |
| BRHTS | 85044090 |
| INHTS | 85044090 |
| MXHTS | 8504.40.99 |