MDD(Microdiode Semiconductor) KBP301
| Fabricant | MDD(Microdiode Semiconductor)Asian Brands |
| Réf. Fab. | KBP301 |
| Réf. LCSC | C2993406 |
| Condit. | KBP |
| Numéro Client | |
| Caract. clés | 60A 1.1V@3A 3A 100V KBP Bridge Rectifiers RoHS |
| Fiche Technique | MDD(Microdiode Semiconductor) KBP301 |
| Conformité RoHS | 1 documents disponibles |
| Pièces alternatives | 5 |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Diodes/Bridge Rectifiers | |
| Fabricant | MDD(Microdiode Semiconductor) | |
| Condit. | KBP | |
| Non-Repetitive Peak Forward Surge Current | 60A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Reverse Leakage Current (Ir) | 10uA@100V | |
| Voltage - Forward(Vf@If) | 1.1V@3A | |
| Current - Rectified | 3A | |
| Voltage - DC Reverse(Vr) | 100V |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Diodes/Bridge Rectifiers | |
| Fabricant | MDD(Microdiode Semiconductor) | |
| Condit. | KBP | |
| Non-Repetitive Peak Forward Surge Current | 60A | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Reverse Leakage Current (Ir) | 10uA@100V | |
| Voltage - Forward(Vf@If) | 1.1V@3A | |
| Current - Rectified | 3A | |
| Voltage - DC Reverse(Vr) | 100V |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- Glass passivated chip junction
- Plastic package meets Underwriters Laboratories 94V-0 flammability rating
- Suitable for PCB mounting
- Low reverse leakage
- High forward surge current capability
- High temperature soldering guaranteed: 260°C/10 seconds
Garantie sur chaque commande
100% Authentique · Retour ou échange sous 30 Jours
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Diodes/Bridge Rectifiers | |
| Fabricant | MDD(Microdiode Semiconductor) | |
| Condit. | KBP | |
| Non-Repetitive Peak Forward Surge Current | 60A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Reverse Leakage Current (Ir) | 10uA@100V | |
| Voltage - Forward(Vf@If) | 1.1V@3A | |
| Current - Rectified | 3A | |
| Voltage - DC Reverse(Vr) | 100V |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Diodes/Bridge Rectifiers | |
| Fabricant | MDD(Microdiode Semiconductor) | |
| Condit. | KBP | |
| Non-Repetitive Peak Forward Surge Current | 60A | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Reverse Leakage Current (Ir) | 10uA@100V | |
| Voltage - Forward(Vf@If) | 1.1V@3A | |
| Current - Rectified | 3A | |
| Voltage - DC Reverse(Vr) | 100V |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- Glass passivated chip junction
- Plastic package meets Underwriters Laboratories 94V-0 flammability rating
- Suitable for PCB mounting
- Low reverse leakage
- High forward surge current capability
- High temperature soldering guaranteed: 260°C/10 seconds
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8504409190 |
| USHTS | 8504409540 |
| TARIC | 8504409590 |
| CAHTS | 8504409099 |
| BRHTS | 85044090 |
| INHTS | 85044090 |
| MXHTS | 8504.40.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8504409190 |
| USHTS | 8504409540 |
| TARIC | 8504409590 |
| Type | Détails |
|---|---|
| CAHTS | 8504409099 |
| BRHTS | 85044090 |
| INHTS | 85044090 |
| MXHTS | 8504.40.99 |

