Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi NTBGS002N06C
| Producent | |
| Nr części prod. | NTBGS002N06C |
| Nr LCSC | C2902077 |
| Opak. | TO-263-7 |
| Numer Klienta | |
| Klucz. cechy | N-Channel MOSFET, Current:211A, Voltage:60V |
| Karta Katalogowa | onsemi NTBGS002N06C |
| Zgodność z RoHS | 3 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | TO-263-7 | |
| Output Capacitance(Coss) | 2.31nF | |
| Pd - Power Dissipation | 178W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 211A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| RDS(on) | 2.2mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.62nF | |
| Gate Charge(Qg) | 62.1nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | TO-263-7 | |
| Output Capacitance(Coss) | 2.31nF | |
| Pd - Power Dissipation | 178W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 211A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| RDS(on) | 2.2mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.62nF | |
| Gate Charge(Qg) | 62.1nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Low on-resistance R<sub>DS(on)</sub> to minimize conduction losses
- Low gate charge Q<sub>G</sub> and capacitance to minimize drive losses
- Reduced switching noise/EMI
- Lead-free, halogen-free/bromine-free flame retardant, RoHS compliant
Zastosowania
Tłumaczenie AI
- Power tools, battery-powered vacuum cleaners
- Drones, material handling
- Battery management systems/energy storage, home automation
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 7.0855 | $ 7.09 |
| 200+ | $ 2.7429 | $ 548.58 |
| 500+ | $ 2.6462 | $ 1323.10 |
| 800+ | $ 2.5986 | $ 2078.88 |
Standardowa Obudowa800/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | TO-263-7 | |
| Output Capacitance(Coss) | 2.31nF | |
| Pd - Power Dissipation | 178W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 211A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| RDS(on) | 2.2mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.62nF | |
| Gate Charge(Qg) | 62.1nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | TO-263-7 | |
| Output Capacitance(Coss) | 2.31nF | |
| Pd - Power Dissipation | 178W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 211A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| RDS(on) | 2.2mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.62nF | |
| Gate Charge(Qg) | 62.1nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Low on-resistance R<sub>DS(on)</sub> to minimize conduction losses
- Low gate charge Q<sub>G</sub> and capacitance to minimize drive losses
- Reduced switching noise/EMI
- Lead-free, halogen-free/bromine-free flame retardant, RoHS compliant
Zastosowania
Tłumaczenie AI
- Power tools, battery-powered vacuum cleaners
- Drones, material handling
- Battery management systems/energy storage, home automation
C2902077 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| IPF026N15NM6ATMA1 | Infineon | Podobne | TO-263-7 | 18 | $ 6.4009 | ||
| IRFS3006TRL7PP | Infineon | Podobne | D2PAK-7 | 100 | $ 3.0617 | ||
| IPB025N10N3G(TOKMAS) | Tokmas | Podobne | TO-263-7L | 895 | $ 1.7307 | ||
| IPB017N10N5LFATMA1 | Infineon | Podobne | TO-263-7 | 1,056 | $ 5.0656 | ||
| IPB024N10N5 | Infineon | Podobne | TO-263-7 | 17 | $ 4.96 |
5 więcej części alternatywnych.Wyświetl wszystkie zamienniki