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EDA-ModelleEasyEDA
JSMSEMI TPC8A02
| Hersteller | JSMSEMIAsian Brands |
| Herst.-Teilenr. | TPC8A02 |
| LCSC-Nr. | C28314414 |
| Verp. | SOP-8 |
| Kundennummer | |
| Hauptmerkm. | N-Channel MOSFET, Current:20A, Voltage:30V |
| Datenblatt | JSMSEMI TPC8A02 |
| RoHS-Konformität | 6 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSMSEMI | |
| Verp. | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -50℃~+150℃ | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.32nF | |
| Pd - Power Dissipation | 3.1W | |
| Reverse Transfer Capacitance (Crss) | 135pF | |
| RDS(on) | 6.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 23.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSMSEMI | |
| Verp. | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -50℃~+150℃ | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.32nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 3.1W | |
| Reverse Transfer Capacitance (Crss) | 135pF | |
| RDS(on) | 6.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 23.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
This N-channel MOSFET employs advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Merkmale
KI-Übersetzung
- Drain-Source Voltage (VDS) = 30V, Drain Current (ID) = 20A, On-Resistance (RDS(ON)) < 6.5mΩ at VGS = 10V
- Low gate charge.
- Available in eco-friendly (green) devices.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Excellent package thermal dissipation performance.
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.4014 | $ 0.40 |
| 200+ | $ 0.1602 | $ 32.04 |
| 500+ | $ 0.1548 | $ 77.40 |
| 1,000+ | $ 0.1522 | $ 152.20 |
Standardgehäuse50/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSMSEMI | |
| Verp. | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -50℃~+150℃ | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.32nF | |
| Pd - Power Dissipation | 3.1W | |
| Reverse Transfer Capacitance (Crss) | 135pF | |
| RDS(on) | 6.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 23.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSMSEMI | |
| Verp. | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -50℃~+150℃ | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.32nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 3.1W | |
| Reverse Transfer Capacitance (Crss) | 135pF | |
| RDS(on) | 6.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 23.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This N-channel MOSFET employs advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Merkmale
KI-Übersetzung
- Drain-Source Voltage (VDS) = 30V, Drain Current (ID) = 20A, On-Resistance (RDS(ON)) < 6.5mΩ at VGS = 10V
- Low gate charge.
- Available in eco-friendly (green) devices.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Excellent package thermal dissipation performance.
C28314414 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |