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EDA-ModelleEasyEDA
HXY MOSFET HESDM3031MXT5G
| Hersteller | HXY MOSFETAsian Brands |
| Herst.-Teilenr. | HESDM3031MXT5G |
| LCSC-Nr. | C22439895 |
| Verp. | DFN0603-2L |
| Kundennummer | |
| Hauptmerkm. | ESD DIODE 3.3VWM 10VC DFN0603-2L |
| Datenblatt | HXY MOSFET HESDM3031MXT5G |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Hersteller | HXY MOSFET | |
| Verp. | DFN0603-2L | |
| Clamping Voltage | 10V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 5A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | 90W@8/20us | |
| Voltage - Breakdown | 6.5V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 100nA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 3.3V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Hersteller | HXY MOSFET | |
| Verp. | DFN0603-2L | |
| Clamping Voltage | 10V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 5A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | 90W@8/20us |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - Breakdown | 6.5V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 100nA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 3.3V |
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Beschreibung
KI-Übersetzung
The HESDM3031MXT5G is designed to protect sensitive semiconductor components from damage or interference caused by ESD and other voltage-induced transient events. Its excellent clamping capability, low leakage current, low capacitance, and fast response time provide industry-leading protection for designs exposed to ESD environments. It offers designers the flexibility to protect a single bidirectional line in applications where arrays are not suitable.
Merkmale
KI-Übersetzung
- Small form factor: 0.61mm × 0.31mm
- Low body height: 0.28 mm
- Low leakage current
- Typical response time < 1 ns
- Compliant with Human Body Model Level 3 ESD rating
- IEC61000-4-2 Level 4 ESD protection
- Lead-free device
- RoHS-compliant and halogen-free materials
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 10Vielfaches: 10Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 10+ | $ 0.0702 | $ 0.70 |
| 100+ | $ 0.0555 | $ 5.55 |
| 300+ | $ 0.0482 | $ 14.46 |
| 1,000+ | $ 0.0426 | $ 42.60 |
| 5,000+ | $ 0.0382 | $ 191.00 |
| 15,000+ | $ 0.036 | $ 540.00 |
Standardgehäuse15000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Hersteller | HXY MOSFET | |
| Verp. | DFN0603-2L | |
| Clamping Voltage | 10V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 5A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | 90W@8/20us | |
| Voltage - Breakdown | 6.5V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 100nA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 3.3V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Hersteller | HXY MOSFET | |
| Verp. | DFN0603-2L | |
| Clamping Voltage | 10V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 5A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | 90W@8/20us |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - Breakdown | 6.5V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 100nA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 3.3V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The HESDM3031MXT5G is designed to protect sensitive semiconductor components from damage or interference caused by ESD and other voltage-induced transient events. Its excellent clamping capability, low leakage current, low capacitance, and fast response time provide industry-leading protection for designs exposed to ESD environments. It offers designers the flexibility to protect a single bidirectional line in applications where arrays are not suitable.
Merkmale
KI-Übersetzung
- Small form factor: 0.61mm × 0.31mm
- Low body height: 0.28 mm
- Low leakage current
- Typical response time < 1 ns
- Compliant with Human Body Model Level 3 ESD rating
- IEC61000-4-2 Level 4 ESD protection
- Lead-free device
- RoHS-compliant and halogen-free materials
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| HPESDNC2XD3V3B | HXY MOSFET | DFN0603-2L | 200 | $0.0151 $0.0167 | ||
| PESD3V3S1BSFYL-HXY | HXY MOSFET | DFN0603-2L | 590 | $0.0846 $0.089 | ||
| HDESD3V3XA1BCSF-7 | HXY MOSFET | DFN0603-2L | 430 | $0.0716 $0.0753 | ||
| PESD3V3C1BSFYL-HXY | HXY MOSFET | DFN0603-2L | 380 | $0.0589 $0.0619 | ||
| HUCLAMP3331ZATFT | HXY MOSFET | DFN0603-2L | 0 | $ 0.0629 | ||
| HAZ5A23-01F | HXY MOSFET | DFN0603-2L | 0 | $ 0.0568 | ||
| HESD5431XZ | HXY MOSFET | DFN0603-2L | 0 | $ 0.0271 | ||
| HPESD3V3V1BCSF-N | HXY MOSFET | DFN0603-2L | 0 | $ 0.0279 | ||
| HCESD0603NC3V3B-M | HXY MOSFET | DFN0603-2L | 0 | $ 0.0709 | ||
| HAOZ8251ADI-05 | HXY MOSFET | DFN0603-2L | 0 | $ 0.1018 |