R+O BZT52B9V1S
| Fabricante | R+OAsian Brands |
| N.º de pieza fab. | BZT52B9V1S |
| Nº LCSC | C22399885 |
| Emb. | SOD-323 |
| Número de Cliente | |
| Atrib. clave | DIODE ZENER 9.1V 200mW SOD-323 |
| Hoja de Datos | R+O BZT52B9V1S |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 4 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Fabricante | R+O | |
| Emb. | SOD-323 | |
| Diode Configuration | 1 Independent | |
| Tolerance | - | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Pd - Power Dissipation | 200mW | |
| Reverse Leakage Current (Ir) | 500nA | |
| Impedance(Zzt) | 15Ω | |
| Zener Voltage(Range) | 8.92V~9.28V | |
| Zener Voltage(Nom) | 9.1V | |
| Impedance(Zzk) | 100Ω |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Fabricante | R+O | |
| Emb. | SOD-323 | |
| Diode Configuration | 1 Independent | |
| Tolerance | - | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 200mW | |
| Reverse Leakage Current (Ir) | 500nA | |
| Impedance(Zzt) | 15Ω | |
| Zener Voltage(Range) | 8.92V~9.28V | |
| Zener Voltage(Nom) | 9.1V | |
| Impedance(Zzk) | 100Ω |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Low Zener impedance
- Power dissipation: 200 mW
- High stability and reliability
- Compliant with J-STD-020 MSL Level 1, LF peak temperature 260°C
Aplicaciones
Traducción por IA
- Reference voltage source in regulated power supplies
- Protection diode in overvoltage protection circuits
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Fabricante | R+O | |
| Emb. | SOD-323 | |
| Diode Configuration | 1 Independent | |
| Tolerance | - | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Pd - Power Dissipation | 200mW | |
| Reverse Leakage Current (Ir) | 500nA | |
| Impedance(Zzt) | 15Ω | |
| Zener Voltage(Range) | 8.92V~9.28V | |
| Zener Voltage(Nom) | 9.1V | |
| Impedance(Zzk) | 100Ω |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Fabricante | R+O | |
| Emb. | SOD-323 | |
| Diode Configuration | 1 Independent | |
| Tolerance | - | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 200mW | |
| Reverse Leakage Current (Ir) | 500nA | |
| Impedance(Zzt) | 15Ω | |
| Zener Voltage(Range) | 8.92V~9.28V | |
| Zener Voltage(Nom) | 9.1V | |
| Impedance(Zzk) | 100Ω |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Low Zener impedance
- Power dissipation: 200 mW
- High stability and reliability
- Compliant with J-STD-020 MSL Level 1, LF peak temperature 260°C
Aplicaciones
Traducción por IA
- Reference voltage source in regulated power supplies
- Protection diode in overvoltage protection circuits
C22399885 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |



