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Zdjęcia poglądowe
Modele EDAEasyEDA
VBsemi Elec VBMB17R10S
| Producent | VBsemi ElecAsian Brands |
| Nr części prod. | VBMB17R10S |
| Nr LCSC | C22357392 |
| Opak. | TO-220F |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 700V 10A TO-220F |
| Karta Katalogowa | VBsemi Elec VBMB17R10S |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| RDS(on) | 390mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 62nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| RDS(on) | 390mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 62nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Low figure-of-merit (FOM) Rₒₙ×Q₉
- Low input capacitance (Cᵢₛₛ)
- Reduced switching and conduction losses
- Ultra low gate charge (Q₉)
- Avalanche energy rated (UIS)
Zastosowania
Tłumaczenie AI
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
- Industrial
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 2
2 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 1.5433$ 1.3119 | $ 1.31 |
| 10+ | $ 1.2766$ 1.0852 | $ 10.85 |
| 50+ | $ 1.1289$ 0.9596 | $ 47.98 |
| 100+ | $ 0.9638$ 0.8193 | $ 81.93 |
| 500+ | $ 0.8892$ 0.7559 | $ 377.95 |
| 1,000+ | $ 0.8574$ 0.7288 | $ 728.80 |
Standardowa Obudowa50/Full Tube | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| RDS(on) | 390mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 62nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| RDS(on) | 390mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 62nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Low figure-of-merit (FOM) Rₒₙ×Q₉
- Low input capacitance (Cᵢₛₛ)
- Reduced switching and conduction losses
- Ultra low gate charge (Q₉)
- Avalanche energy rated (UIS)
Zastosowania
Tłumaczenie AI
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
- Industrial
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| AOTF450A70L-VB | VBsemi Elec | Podobne | TO-220F | 1 | $1.3119 $1.5433 | ||
| AOTF360A70L-VB | VBsemi Elec | Podobne | TO-220F | 5 | $1.8692 $2.199 | ||
| VBMB17R15S | VBsemi Elec | Podobne | TO-220F | 5 | $1.8692 $2.199 | ||
| NTPF360N80S3Z-VB | VBsemi Elec | Podobne | TO-220F | 2 | $2.2417 $2.6372 | ||
| FCPF400N80ZL1-VB | VBsemi Elec | Podobne | TO-220F | 4 | $2.2417 $2.6372 |
5 więcej części alternatywnych.Wyświetl wszystkie zamienniki