VISHAY VS-HFA32PA120C-N3
| Hersteller | |
| Herst.-Teilenr. | VS-HFA32PA120C-N3 |
| LCSC-Nr. | C22253695 |
| Verp. | - |
| Kundennummer | |
| Hauptmerkm. | 1 Pair Common Cathode 32A 1.2kV 3V@16A Diode Arrays RoHS |
| Datenblatt | VISHAY VS-HFA32PA120C-N3 |
| RoHS-Konformität | 1 Dokumente verfügbar |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Hersteller | VISHAY | |
| Verp. | - | |
| Non-Repetitive Peak Forward Surge Current | 190A | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 32A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 1.2kV | |
| Voltage - Forward(Vf@If) | 3V@16A | |
| Reverse Leakage Current (Ir) | 20uA@1200V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Hersteller | VISHAY | |
| Verp. | - | |
| Non-Repetitive Peak Forward Surge Current | 190A | |
| Diode Configuration | 1 Pair Common Cathode |
| Typ | Beschreibung | |
|---|---|---|
| Current - Rectified | 32A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 1.2kV | |
| Voltage - Forward(Vf@If) | 3V@16A | |
| Reverse Leakage Current (Ir) | 20uA@1200V |
Beschreibung
VS-HFA32PA120C... is an advanced ultrafast recovery diode. Utilizing the latest epitaxial structure and advanced processing technology, it offers an outstanding combination of characteristics that surpasses the performance of any previously available rectifier. The VS-HFA32PA120C... is rated at 1200 V with a continuous current of 16 A per leg, making it particularly well suited as a companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery times, the HEXFRED® product line features extremely low peak recovery current (IRRM) with no tendency for "snappy" turn-off during the tb phase of recovery. HEXFRED characteristics provide designers with a rectifier that delivers lower noise and significantly reduced switching losses in both the diode and the switching transistor. These HEXFRED advantages contribute to significant reductions in snubbing requirements, component count, and heatsink size. HEXFRED VS-HFA32PA120C... is ideal for use in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications requiring high speed and high efficiency.
Merkmale
- Ultra-fast and ultra-soft recovery
- Extremely low IRRM and Qrr
- Designed and qualified per JEDEC® - JESD 47
Anwendungen
- Power
- Power Conversion Systems
- Motor Drivers
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 9.7237 | $ 9.72 |
| 200+ | $ 3.8797 | $ 775.94 |
| 500+ | $ 3.7512 | $ 1875.60 |
| 1,000+ | $ 3.6862 | $ 3686.20 |
Standardgehäuse500/Full Tube | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Hersteller | VISHAY | |
| Verp. | - | |
| Non-Repetitive Peak Forward Surge Current | 190A | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 32A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 1.2kV | |
| Voltage - Forward(Vf@If) | 3V@16A | |
| Reverse Leakage Current (Ir) | 20uA@1200V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Hersteller | VISHAY | |
| Verp. | - | |
| Non-Repetitive Peak Forward Surge Current | 190A | |
| Diode Configuration | 1 Pair Common Cathode |
| Typ | Beschreibung | |
|---|---|---|
| Current - Rectified | 32A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 1.2kV | |
| Voltage - Forward(Vf@If) | 3V@16A | |
| Reverse Leakage Current (Ir) | 20uA@1200V |
Beschreibung
VS-HFA32PA120C... is an advanced ultrafast recovery diode. Utilizing the latest epitaxial structure and advanced processing technology, it offers an outstanding combination of characteristics that surpasses the performance of any previously available rectifier. The VS-HFA32PA120C... is rated at 1200 V with a continuous current of 16 A per leg, making it particularly well suited as a companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery times, the HEXFRED® product line features extremely low peak recovery current (IRRM) with no tendency for "snappy" turn-off during the tb phase of recovery. HEXFRED characteristics provide designers with a rectifier that delivers lower noise and significantly reduced switching losses in both the diode and the switching transistor. These HEXFRED advantages contribute to significant reductions in snubbing requirements, component count, and heatsink size. HEXFRED VS-HFA32PA120C... is ideal for use in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications requiring high speed and high efficiency.
Merkmale
- Ultra-fast and ultra-soft recovery
- Extremely low IRRM and Qrr
- Designed and qualified per JEDEC® - JESD 47
Anwendungen
- Power
- Power Conversion Systems
- Motor Drivers
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

