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VBsemi Elec SQ4470EY-T1-GE3-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | SQ4470EY-T1-GE3-VB |
| LCSC-Nr. | C20754967 |
| Verp. | SO-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 60V 12A SO-8 |
| Datenblatt | VBsemi Elec SQ4470EY-T1-GE3-VB |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 90pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 3.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 12mΩ@10V;15mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 21nC@10V;10.5nC@4.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 90pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 3.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 12mΩ@10V;15mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 21nC@10V;10.5nC@4.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Halogen-free per IEC 61249-2-21
- Trench power MOSFET
- Optimized for "low-side" synchronous rectifier operation
- 100% Rg and UIS tested
- RoHS compliant
- Halogen-free version available
Anwendungen
KI-Übersetzung
- Cold Cathode Fluorescent Lamp (CCFL) inverter
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 25
25 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.5478$ 0.4657 | $ 0.47 |
| 10+ | $ 0.4303$ 0.3658 | $ 3.66 |
| 30+ | $ 0.3811$ 0.3240 | $ 9.72 |
| 100+ | $ 0.3176$ 0.2700 | $ 27.00 |
| 500+ | $ 0.289$ 0.2457 | $ 122.85 |
| 1,000+ | $ 0.2731$ 0.2322 | $ 232.20 |
Standardgehäuse4000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 90pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 3.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 12mΩ@10V;15mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 21nC@10V;10.5nC@4.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 90pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 3.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 12mΩ@10V;15mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 21nC@10V;10.5nC@4.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Halogen-free per IEC 61249-2-21
- Trench power MOSFET
- Optimized for "low-side" synchronous rectifier operation
- 100% Rg and UIS tested
- RoHS compliant
- Halogen-free version available
Anwendungen
KI-Übersetzung
- Cold Cathode Fluorescent Lamp (CCFL) inverter
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| HMS4438-VB | VBsemi Elec | Ähnliche | SO-8 | 50 | $0.4859 $0.5716 | ||
| HM4264-VB | VBsemi Elec | Ähnliche | SO-8 | 50 | $0.4916 $0.5783 | ||
| SQ4850EY-T1-GE3-VB | VBsemi Elec | Ähnliche | SO-8 | 100 | $0.6583 $0.6929 | ||
| TPC8049-H-VB | VBsemi Elec | Ähnliche | SO-8 | 50 | $0.4792 $0.5637 | ||
| FDS5670-NL-VB | VBsemi Elec | Ähnliche | SO-8 | 1,443 | $0.3040 $0.3576 |
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