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ElecSuper AON6512-ES
| Producent | ElecSuperAsian Brands |
| Nr części prod. | AON6512-ES |
| Nr LCSC | C19725103 |
| Opak. | PDFN5x6-8L |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 30V 120A PDFN5x6-8L |
| Karta Katalogowa | ElecSuper AON6512-ES |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ElecSuper | |
| Opak. | PDFN5x6-8L | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.71nF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 120W | |
| RDS(on) | 1.15mΩ@10V;1.5mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.05nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ElecSuper | |
| Opak. | PDFN5x6-8L | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.71nF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 120W | |
| RDS(on) | 1.15mΩ@10V;1.5mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.05nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
AON6512-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it achieves excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product AON6512-ES is lead-free.
Funkcje
Tłumaczenie AI
- 30V, R DS(ON) = 1.15 mΩ (typical) at VGS = 10 V
- R DS(ON) = 1.5 mΩ (typical) at VGS = 4.5 V
- Trench MOSFET technology
- High-density cell design for low R DS(ON)
- Material: Halogen-free
- Robust and reliable
- Avalanche rated
- Low leakage current
Zastosowania
Tłumaczenie AI
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 966
966 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 0.4121 | $ 0.41 |
| 10+ | $ 0.3284 | $ 3.28 |
| 30+ | $ 0.2923 | $ 8.77 |
| 100+ | $ 0.2479 | $ 24.79 |
| 500+ | $ 0.2282 | $ 114.10 |
| 1,000+ | $ 0.2167 | $ 216.70 |
Standardowa Obudowa5000/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ElecSuper | |
| Opak. | PDFN5x6-8L | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.71nF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 120W | |
| RDS(on) | 1.15mΩ@10V;1.5mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.05nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ElecSuper | |
| Opak. | PDFN5x6-8L | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.71nF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 120W | |
| RDS(on) | 1.15mΩ@10V;1.5mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.05nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
AON6512-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it achieves excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product AON6512-ES is lead-free.
Funkcje
Tłumaczenie AI
- 30V, R DS(ON) = 1.15 mΩ (typical) at VGS = 10 V
- R DS(ON) = 1.5 mΩ (typical) at VGS = 4.5 V
- Trench MOSFET technology
- High-density cell design for low R DS(ON)
- Material: Halogen-free
- Robust and reliable
- Avalanche rated
- Low leakage current
Zastosowania
Tłumaczenie AI
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
C19725103 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| TPH1R403NL-ES | ElecSuper | Podobne | PDFN5x6-8L | 4,070 | $ 0.372 | ||
| ESN6512 | ElecSuper | Podobne | PDFN5x6-8L | 2,695 | $ 0.4693 | ||
| AONS32310(ES) | ElecSuper | Podobne | PDFN-8L(5x6) | 194 | $ 0.6325 | ||
| AON6500(ES) | ElecSuper | Podobne | PDFN-8L(5x6) | 169 | $ 0.6325 | ||
| AON6548(ES) | ElecSuper | Podobne | PDFN-8L(5x6) | 188 | $ 0.6325 |
5 więcej części alternatywnych.Wyświetl wszystkie zamienniki