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JSMSEMI FDD3690-JSM
| Hersteller | JSMSEMIAsian Brands |
| Herst.-Teilenr. | FDD3690-JSM |
| LCSC-Nr. | C18194885 |
| Verp. | TO-252 |
| Kundennummer | |
| Hauptmerkm. | 100V 36A 2.5V 71W 20mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS |
| Datenblatt | JSMSEMI FDD3690-JSM |
| RoHS-Konformität | 6 Dokumente verfügbar |
| Alternativteile | 20 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSMSEMI | |
| Verp. | TO-252 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 36A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 71W | |
| RDS(on) | 20mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 9.5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1nF | |
| Gate Charge(Qg) | 16.2nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSMSEMI | |
| Verp. | TO-252 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 36A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 71W | |
| RDS(on) | 20mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 9.5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1nF | |
| Gate Charge(Qg) | 16.2nC@10V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
This N-channel MOSFET employs advanced SGT technology and design to achieve excellent on-resistance RDS(on) with low gate charge. It is suitable for a wide range of applications.
Merkmale
KI-Übersetzung
- Drain-source voltage V<sub>DS</sub> = 100 V, drain current I<sub>D</sub> = 36 A, on-resistance R<sub>DS(ON)</sub> < 20 mΩ at V<sub>GS</sub> = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low R<sub>DS(ON)</sub>
- Excellent package thermal dissipation
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.7086 | $ 0.71 |
| 200+ | $ 0.2838 | $ 56.76 |
| 500+ | $ 0.2747 | $ 137.35 |
| 1,000+ | $ 0.2686 | $ 268.60 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSMSEMI | |
| Verp. | TO-252 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 36A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 71W | |
| RDS(on) | 20mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 9.5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1nF | |
| Gate Charge(Qg) | 16.2nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSMSEMI | |
| Verp. | TO-252 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 36A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 71W | |
| RDS(on) | 20mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 9.5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1nF | |
| Gate Charge(Qg) | 16.2nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This N-channel MOSFET employs advanced SGT technology and design to achieve excellent on-resistance RDS(on) with low gate charge. It is suitable for a wide range of applications.
Merkmale
KI-Übersetzung
- Drain-source voltage V<sub>DS</sub> = 100 V, drain current I<sub>D</sub> = 36 A, on-resistance R<sub>DS(ON)</sub> < 20 mΩ at V<sub>GS</sub> = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low R<sub>DS(ON)</sub>
- Excellent package thermal dissipation
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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