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JSMSEMI SPP2341S23RG-JSM

Fabricant
JSMSEMIAsian Brands
Réf. Fab.
SPP2341S23RG-JSM
Réf. LCSC
C18193761
Condit.
SOT-23
Numéro Client
Caract. clés
30V 4.3A 1.5W 52mΩ@10V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS
Fiche TechniqueJSMSEMI SPP2341S23RG-JSM
Conformité RoHS6 documents disponibles
Pièces alternatives5
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Spécifications du Produit

Tout
TypeDescription
CatégorieDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
FabricantJSMSEMI
Condit.SOT-23
Operating Temperature-
Drain to Source Voltage30V
Output Capacitance(Coss)280pF
Current - Continuous Drain(Id)4.3A
Ciss-Input Capacitance672pF
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss)102pF
RDS(on)52mΩ@10V
Number1 P-Channel
Gate Charge(Qg)6.2nC@4.5V
Gate Threshold Voltage (Vgs(th))1.2V
TypeP-Channel
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Description

Traduction par IA

SPP2341S23RG is a P-channel logic-level enhancement-mode power MOSFET fabricated using advanced trench technology with high cell density. This high-density process is specifically designed to minimize on-resistance. These devices are particularly suitable for low-voltage applications where low in-line power dissipation is required in a very compact SMT package.

Caractéristiques

Traduction par IA
  • -30V/-4.3A, RDS(ON) = 44mΩ (typical) @ VGS = -10V
  • -30V/-3.5A, RDS(ON) = 50mΩ (typical) @ VGS = -4.5V
  • -30V/-2.5A, RDS(ON) = 65mΩ (typical) @ VGS = -2.5V
  • Ultra-low RDS(ON) optimized design
  • Excellent on-resistance and maximum DC current capability
  • Fully RoHS compliant
  • SOT23 package

Applications

Traduction par IA
  • Power Management - Portable Devices - DC/DC Converters - Load Switches - Digital Cameras - LCD Display Inverters