Abbildung ähnlich
EDA-ModelleEasyEDA
TOSHIBA GT50JR22(STA1,E,S)
| Hersteller | |
| Herst.-Teilenr. | GT50JR22(STA1,E,S) |
| LCSC-Nr. | C17638066 |
| Verp. | SC-65-3 |
| Kundennummer | |
| Hauptmerkm. | IGBT 600V 50A SC-65-3 |
| Datenblatt | TOSHIBA GT50JR22(STA1,E,S) |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | TOSHIBA | |
| Verp. | SC-65-3 | |
| Td(off) | 330ns | |
| Pd - Power Dissipation | 230W | |
| Td(on) | 250ns | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@15V,50A | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 2.2V@50A,15V | |
| Collector Cut-Off Current (Ices) | 1mA | |
| Reverse Recovery Time(trr) | 350ns | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.7nF | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | TOSHIBA | |
| Verp. | SC-65-3 | |
| Td(off) | 330ns | |
| Pd - Power Dissipation | 230W | |
| Td(on) | 250ns | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@15V,50A | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 2.2V@50A,15V | |
| Collector Cut-Off Current (Ices) | 1mA | |
| Reverse Recovery Time(trr) | 350ns | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.7nF | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | - |
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Merkmale
KI-Übersetzung
- 6.5th generation
- The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip.
- Enhancement mode
- High-speed switching IGBT : tf = 0.05 μs (typ.) (IC = 50 A) FWD : trr = 0.35 μs (typ.) (IF = 15 A)
- Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A)
- High junction temperature : Tj = 175℃ (max)
Anwendungen
KI-Übersetzung
- Dedicated to Current-Resonant Inverter Switching Applications
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 14
14 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 7.7836 | $ 7.78 |
| 10+ | $ 7.6829 | $ 76.83 |
| 25+ | $ 7.6163 | $ 190.41 |
| 100+ | $ 7.5481 | $ 754.81 |
Standardgehäuse25/Full Tube | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | TOSHIBA | |
| Verp. | SC-65-3 | |
| Td(off) | 330ns | |
| Pd - Power Dissipation | 230W | |
| Td(on) | 250ns | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@15V,50A | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 2.2V@50A,15V | |
| Collector Cut-Off Current (Ices) | 1mA | |
| Reverse Recovery Time(trr) | 350ns | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.7nF | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | TOSHIBA | |
| Verp. | SC-65-3 | |
| Td(off) | 330ns | |
| Pd - Power Dissipation | 230W | |
| Td(on) | 250ns | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@15V,50A | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 2.2V@50A,15V | |
| Collector Cut-Off Current (Ices) | 1mA | |
| Reverse Recovery Time(trr) | 350ns | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.7nF | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | - |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- 6.5th generation
- The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip.
- Enhancement mode
- High-speed switching IGBT : tf = 0.05 μs (typ.) (IC = 50 A) FWD : trr = 0.35 μs (typ.) (IF = 15 A)
- Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A)
- High junction temperature : Tj = 175℃ (max)
Anwendungen
KI-Übersetzung
- Dedicated to Current-Resonant Inverter Switching Applications
C17638066 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| GT50JR22(S1WLD,E,S | TOSHIBA | Ähnliche | TO-3P-3 | 8,674 | $ 1.6736 | ||
| CRG40T60AN3S | CRMICRO | Ähnliche | TO-3PN | 1,112 | $ 1.5504 | ||
| FGA6560WDF | onsemi | Ähnliche | TO-3PN | 534 | $ 3.0941 | ||
| FGA40T65SHD | onsemi | Ähnliche | TO-3PN | 50 | $ 6.9161 | ||
| FGA60N65SMD | onsemi | Ähnliche | TO-3PN | 3,437 | $ 2.9892 |
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