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Modelli EDAEasyEDA
DIODES DMTH4008LPDW-13
| Produttore | |
| Cod. Prod. | DMTH4008LPDW-13 |
| Cod. LCSC | C17504702 |
| Imballo | DFN-8 |
| Numero Cliente | |
| Attr. chiave | 40V 46.2A 39.4W 17.5mΩ@4.5V 2.3V 2 N-Channel DFN-8 FET, MOSFET Arrays RoHS |
| Scheda Tecnica | DIODES DMTH4008LPDW-13 |
| Conformità RoHS | 4 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Produttore | DIODES | |
| Imballo | DFN-8 | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 46.2A | |
| Pd - Power Dissipation | 39.4W | |
| RDS(on) | 17.5mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Type | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 19.5pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 881pF | |
| Gate Charge(Qg) | 12.3nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 496pF |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Produttore | DIODES | |
| Imballo | DFN-8 | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 46.2A | |
| Pd - Power Dissipation | 39.4W | |
| RDS(on) | 17.5mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Tipo | Descrizione | |
|---|---|---|
| Type | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 19.5pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 881pF | |
| Gate Charge(Qg) | 12.3nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 496pF |
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Descrizione
Traduzione AI
This next-generation MOSFET is designed to minimize on-resistance RDS(ON) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Caratteristiche
Traduzione AI
- Rated temperature up to +175℃ — suitable for high ambient temperature environments
- 100% unclamped inductive switching tested during production — ensuring greater reliability and durability in end applications
- High conversion efficiency
- Low RDS(ON) — minimizing conduction losses
- Low input capacitance
- Fast switching speed
- Solderable flanks for optical inspection
- Fully lead-free and fully RoHS compliant
- Halogen- and antimony-free, "green" device
Applicazioni
Traduzione AI
- Power Management Functions - DC-DC Converter
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Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.662 | $ 0.66 |
| 200+ | $ 0.2651 | $ 53.02 |
| 500+ | $ 0.256 | $ 128.00 |
| 1,000+ | $ 0.2515 | $ 251.50 |
Package Standard2500/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Produttore | DIODES | |
| Imballo | DFN-8 | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 46.2A | |
| Pd - Power Dissipation | 39.4W | |
| RDS(on) | 17.5mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Type | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 19.5pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 881pF | |
| Gate Charge(Qg) | 12.3nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 496pF |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Produttore | DIODES | |
| Imballo | DFN-8 | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 46.2A | |
| Pd - Power Dissipation | 39.4W | |
| RDS(on) | 17.5mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Tipo | Descrizione | |
|---|---|---|
| Type | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 19.5pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 881pF | |
| Gate Charge(Qg) | 12.3nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 496pF |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This next-generation MOSFET is designed to minimize on-resistance RDS(ON) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Caratteristiche
Traduzione AI
- Rated temperature up to +175℃ — suitable for high ambient temperature environments
- 100% unclamped inductive switching tested during production — ensuring greater reliability and durability in end applications
- High conversion efficiency
- Low RDS(ON) — minimizing conduction losses
- Low input capacitance
- Fast switching speed
- Solderable flanks for optical inspection
- Fully lead-free and fully RoHS compliant
- Halogen- and antimony-free, "green" device
Applicazioni
Traduzione AI
- Power Management Functions - DC-DC Converter
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| IAUC45N04S6L063HATMA1 | Infineon | Simili | TDSON-8 | 62 | $ 1.1916 | ||
| IAUC45N04S6N070HATMA1 | Infineon | Simili | TDSON-8 | 1 | $ 1.485 | ||
| DMTH6010LPDQ-13 | DIODES | Simili | TDFN-8-Power | 197 | $ 1.6376 | ||
| IAUC60N04S6L030HATMA1 | Infineon | Simili | TDSON-8 | 160 | $ 1.6685 | ||
| IAUC60N04S6L045HATMA1 | Infineon | Simili | TDSON-8 | 85 | $ 1.4316 |
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