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Modelli EDAEasyEDA
MCC MCCD2005-TP
| Produttore | |
| Cod. Prod. | MCCD2005-TP |
| Cod. LCSC | C17295722 |
| Imballo | DFN2030-6 |
| Numero Cliente | |
| Attr. chiave | 20V 8A 27mΩ@1.8V 2 N-Channel N-Channel DFN2030-6 Single FETs, MOSFETs RoHS |
| Scheda Tecnica | MCC MCCD2005-TP |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MCC | |
| Imballo | DFN2030-6 | |
| Configuration | Common Drain | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 230pF | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 1.8nF | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 200pF | |
| RDS(on) | 27mΩ@1.8V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 17.9nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MCC | |
| Imballo | DFN2030-6 | |
| Configuration | Common Drain | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 230pF | |
| Current - Continuous Drain(Id) | 8A |
| Tipo | Descrizione | |
|---|---|---|
| Ciss-Input Capacitance | 1.8nF | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 200pF | |
| RDS(on) | 27mΩ@1.8V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 17.9nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
BLM9D2327S - 50PB(G) is a dual-path, two-stage fully integrated Doherty MMIC solution utilizing Ampleon's advanced GEN9 LDMOS technology. The carrier and peaking devices, input power splitter, and output combiner for each path are all integrated within a single package. This multi-band device is ideally suited as a general-purpose driver or small cell final-stage power amplifier in the 2300 MHz to 2700 MHz frequency range. Available in gull-wing or flat-lead package options.
Caratteristiche
Traduzione AI
- Advanced trench MOSFET process technology
- Ultra-low on-resistance and low gate charge
- Halogen-free version available with "-HF" suffix upon request
- Epoxy resin compliant with UL 94 V-0 flammability rating
- Moisture sensitivity level 1
Applicazioni
Traduzione AI
- RF power MMIC for multi-carrier, multi-standard GSM, W-CDMA, and LTE base stations operating in the 2300 MHz to 2700 MHz frequency range
- Dual-path or single-ended applications
- Quadrature combining applications
- Push-pull applications
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Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.2507 | $ 0.25 |
| 10+ | $ 0.1995 | $ 2.00 |
| 30+ | $ 0.1776 | $ 5.33 |
| 100+ | $ 0.1502 | $ 15.02 |
| 500+ | $ 0.138 | $ 69.00 |
| 1,000+ | $ 0.1307 | $ 130.70 |
Package Standard3000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MCC | |
| Imballo | DFN2030-6 | |
| Configuration | Common Drain | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 230pF | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 1.8nF | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 200pF | |
| RDS(on) | 27mΩ@1.8V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 17.9nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MCC | |
| Imballo | DFN2030-6 | |
| Configuration | Common Drain | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 230pF | |
| Current - Continuous Drain(Id) | 8A |
| Tipo | Descrizione | |
|---|---|---|
| Ciss-Input Capacitance | 1.8nF | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 200pF | |
| RDS(on) | 27mΩ@1.8V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 17.9nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
BLM9D2327S - 50PB(G) is a dual-path, two-stage fully integrated Doherty MMIC solution utilizing Ampleon's advanced GEN9 LDMOS technology. The carrier and peaking devices, input power splitter, and output combiner for each path are all integrated within a single package. This multi-band device is ideally suited as a general-purpose driver or small cell final-stage power amplifier in the 2300 MHz to 2700 MHz frequency range. Available in gull-wing or flat-lead package options.
Caratteristiche
Traduzione AI
- Advanced trench MOSFET process technology
- Ultra-low on-resistance and low gate charge
- Halogen-free version available with "-HF" suffix upon request
- Epoxy resin compliant with UL 94 V-0 flammability rating
- Moisture sensitivity level 1
Applicazioni
Traduzione AI
- RF power MMIC for multi-carrier, multi-standard GSM, W-CDMA, and LTE base stations operating in the 2300 MHz to 2700 MHz frequency range
- Dual-path or single-ended applications
- Quadrature combining applications
- Push-pull applications
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| WSD2098N23 | Winsok Semicon | Simili | DFN-6-EP(2x3) | 2,550 | $0.1517 $0.1685 | ||
| CJCD2004 | JSCJ | Simili | DFNWB2x3-6L | 250 | $ 0.1989 | ||
| FH8808G2 | XIN FEI HONG | Simili | DFN-6L(2x3) | 2,935 | $ 0.1019 | ||
| DMN2016LHAB-7 | DIODES | Simili | U-DFN2030-6-EP | 450 | $ 0.2828 | ||
| CJCD2007 | JSCJ | Simili | DFNWB2x3-6L | 1,545 | $ 0.1392 |