Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi NVMFS5C604NLWFT1G
| Producent | |
| Nr części prod. | NVMFS5C604NLWFT1G |
| Nr LCSC | C900443 |
| Opak. | DFN-5(5.9x4.9) |
| Numer Klienta | |
| Klucz. cechy | 200W 60V 287A 0.93mΩ@10V 1 N-channel N-Channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS |
| Karta Katalogowa | onsemi NVMFS5C604NLWFT1G |
| Zgodność z RoHS | 4 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | DFN-5(5.9x4.9) | |
| Output Capacitance(Coss) | 3.75nF | |
| Ciss-Input Capacitance | 8.9nF | |
| Pd - Power Dissipation | 200W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 287A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 0.93mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 52nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | DFN-5(5.9x4.9) | |
| Output Capacitance(Coss) | 3.75nF | |
| Ciss-Input Capacitance | 8.9nF | |
| Pd - Power Dissipation | 200W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 287A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 0.93mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 52nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Compact 5x6 mm package for space-constrained designs
- Low on-resistance RDS(on) minimizes conduction losses
- Low gate charge QG and capacitance minimizes drive losses
- NVMFS5C604NLWF - solderable flank option for optical inspection
- AEC-Q101 qualified, PPAP documentation available
- Lead-free, RoHS compliant
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 10
10 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 6.5654 | $ 6.57 |
| 10+ | $ 6.416 | $ 64.16 |
| 30+ | $ 6.3159 | $ 189.48 |
| 100+ | $ 6.2158 | $ 621.58 |
Standardowa Obudowa1500/Full Reel | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | DFN-5(5.9x4.9) | |
| Output Capacitance(Coss) | 3.75nF | |
| Ciss-Input Capacitance | 8.9nF | |
| Pd - Power Dissipation | 200W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 287A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 0.93mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 52nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | DFN-5(5.9x4.9) | |
| Output Capacitance(Coss) | 3.75nF | |
| Ciss-Input Capacitance | 8.9nF | |
| Pd - Power Dissipation | 200W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 287A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 0.93mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 52nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Compact 5x6 mm package for space-constrained designs
- Low on-resistance RDS(on) minimizes conduction losses
- Low gate charge QG and capacitance minimizes drive losses
- NVMFS5C604NLWF - solderable flank option for optical inspection
- AEC-Q101 qualified, PPAP documentation available
- Lead-free, RoHS compliant
C900443 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| NTMFS5C604NLT3G | onsemi | Podobne | DFN-5(5.9x4.9) | 61 | $ 5.731 | ||
| NVMFS5C604NLT1G | onsemi | Podobne | DFN-5(5x6) | 9 | $ 14.6736 | ||
| NVMFS5C604NLWFAFT1G | onsemi | Bezpośredni | DFN-5(5.9x4.9) | 0 | $ 6.3978 | ||
| NVMFS5C604NLAFT3G | onsemi | Podobne | DFN-5(5x6) | 0 | $ 3.6175 | ||
| NVMFS5C604NLWFAFT3G | onsemi | Podobne | DFN-5(5x6) | 0 | $ 3.8448 |