Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi NVMFS5C442NLWFAFT1G
| Producent | |
| Nr części prod. | NVMFS5C442NLWFAFT1G |
| Nr LCSC | C900429 |
| Opak. | DFN-5(5.9x4.9) |
| Numer Klienta | |
| Klucz. cechy | 83W 40V 130A 2V 2mΩ@10V 1 N-channel N-Channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS |
| Karta Katalogowa | onsemi NVMFS5C442NLWFAFT1G |
| Zgodność z RoHS | 4 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | DFN-5(5.9x4.9) | |
| Output Capacitance(Coss) | 1.1nF | |
| Pd - Power Dissipation | 83W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 130A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.1nF | |
| Gate Charge(Qg) | 23nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | DFN-5(5.9x4.9) | |
| Output Capacitance(Coss) | 1.1nF | |
| Pd - Power Dissipation | 83W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 130A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.1nF | |
| Gate Charge(Qg) | 23nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Compact 5x6 mm package for space-constrained designs
- Low on-resistance RDS(on) minimizes conduction losses
- Low gate charge QG and capacitance minimize drive losses
- NVMFS5C442NLWF – solderable flank option for enhanced optical inspection
- AEC-Q101 qualified, PPAP documentation available
- Lead-free, RoHS compliant
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 1.8241 | $ 1.82 |
| 10+ | $ 1.5513 | $ 15.51 |
| 30+ | $ 1.3796 | $ 41.39 |
| 100+ | $ 1.2048 | $ 120.48 |
| 500+ | $ 1.1267 | $ 563.35 |
| 1,500+ | $ 1.0914 | $ 1637.10 |
Standardowa Obudowa1500/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | DFN-5(5.9x4.9) | |
| Output Capacitance(Coss) | 1.1nF | |
| Pd - Power Dissipation | 83W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 130A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.1nF | |
| Gate Charge(Qg) | 23nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | DFN-5(5.9x4.9) | |
| Output Capacitance(Coss) | 1.1nF | |
| Pd - Power Dissipation | 83W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 130A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.1nF | |
| Gate Charge(Qg) | 23nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Compact 5x6 mm package for space-constrained designs
- Low on-resistance RDS(on) minimizes conduction losses
- Low gate charge QG and capacitance minimize drive losses
- NVMFS5C442NLWF – solderable flank option for enhanced optical inspection
- AEC-Q101 qualified, PPAP documentation available
- Lead-free, RoHS compliant
C900429 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| NTMFS5C442NLT3G | onsemi | Podobne | DFN-5(5.9x4.9) | 20 | $ 2.1125 | ||
| NTMFS5C442NT1G | onsemi | Podobne | DFN-5(5x6) | 2,713 | $ 0.5488 | ||
| NVMFS5C423NLWFAFT1G | onsemi | Podobne | DFN-5(5.9x4.9) | 25 | $ 3.9901 | ||
| NTMFS5C426NLT1G | onsemi | Podobne | DFN-5(5.9x4.9) | 23 | $ 0.822 | ||
| NTMFS5C604NLT3G | onsemi | Podobne | DFN-5(5.9x4.9) | 61 | $ 5.731 |
5 więcej części alternatywnych.Wyświetl wszystkie zamienniki