50% OFF
- Rozmieszczenie wyprowadzeń
- Footprint
Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi AFGHL50T65SQD
| Producent | |
| Nr części prod. | AFGHL50T65SQD |
| Nr LCSC | C898108 |
| Opak. | TO-247-3L |
| Numer Klienta | |
| Klucz. cechy | Field Stop Trench IGBT |
| Karta Katalogowa | onsemi AFGHL50T65SQD |
| Zgodność z RoHS | 2 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | onsemi | |
| Opak. | TO-247-3L | |
| Pd - Power Dissipation | 268W | |
| Td(off) | 81ns | |
| Td(on) | 20ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 11pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.4V@50mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.1V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 30ns | |
| Switching Energy(Eoff) | 460uJ | |
| Turn-On Energy (Eon) | 950uJ | |
| Input Capacitance(Cies) | 3.258nF | |
| Gate Charge(Qg) | 102nC@15V | |
| Output Capacitance(Coes) | 85pF |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | onsemi | |
| Opak. | TO-247-3L | |
| Pd - Power Dissipation | 268W | |
| Td(off) | 81ns | |
| Td(on) | 20ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 11pF | |
| IGBT Type | FS (Field Stop) |
| Typ | Opis | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.4V@50mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.1V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 30ns | |
| Switching Energy(Eoff) | 460uJ | |
| Turn-On Energy (Eon) | 950uJ | |
| Input Capacitance(Cies) | 3.258nF | |
| Gate Charge(Qg) | 102nC@15V | |
| Output Capacitance(Coes) | 85pF |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQD which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in automotive application.
Zastosowania
Tłumaczenie AI
- Automotive HEV−EV Onboard Chargers
- Automotive HEV−EV DC−DC Converters
- Totem Pole Bridgeless PFC
- PTC
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 35
35 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 4.104$ 2.0520 | $ 2.05 |
| 10+ | $ 4.0153$ 2.0077 | $ 20.08 |
| 30+ | $ 3.9544$ 1.9772 | $ 59.32 |
| 90+ | $ 3.8953$ 1.9477 | $ 175.29 |
Standardowa Obudowa30/Full Tube | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | onsemi | |
| Opak. | TO-247-3L | |
| Pd - Power Dissipation | 268W | |
| Td(off) | 81ns | |
| Td(on) | 20ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 11pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.4V@50mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.1V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 30ns | |
| Switching Energy(Eoff) | 460uJ | |
| Turn-On Energy (Eon) | 950uJ | |
| Input Capacitance(Cies) | 3.258nF | |
| Gate Charge(Qg) | 102nC@15V | |
| Output Capacitance(Coes) | 85pF |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | onsemi | |
| Opak. | TO-247-3L | |
| Pd - Power Dissipation | 268W | |
| Td(off) | 81ns | |
| Td(on) | 20ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 11pF | |
| IGBT Type | FS (Field Stop) |
| Typ | Opis | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.4V@50mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.1V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 30ns | |
| Switching Energy(Eoff) | 460uJ | |
| Turn-On Energy (Eon) | 950uJ | |
| Input Capacitance(Cies) | 3.258nF | |
| Gate Charge(Qg) | 102nC@15V | |
| Output Capacitance(Coes) | 85pF |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQD which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in automotive application.
Zastosowania
Tłumaczenie AI
- Automotive HEV−EV Onboard Chargers
- Automotive HEV−EV DC−DC Converters
- Totem Pole Bridgeless PFC
- PTC
C898108 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| FGH50T65SQD-F155 | onsemi | Podobne | TO-247-G03 | 7,016 | $ 2.5155 | ||
| FGHL50T65MQD | onsemi | Podobne | TO-247-3L | 3 | $ 4.7846 | ||
| FGHL50T65MQDT | onsemi | Podobne | TO-247-3L | 87 | $0.6337 $4.5261 | ||
| IKW50N65EH5 | Infineon | Podobne | TO-247-3 | 4,603 | $ 2.5787 | ||
| FGH40T65SHD-F155 | onsemi | Podobne | TO-247-G03 | 680 | $ 1.6798 |