Immagini a scopo illustrativo
Modelli EDAEasyEDA
onsemi NSBC115EPDXV6T1G
| Produttore | |
| Cod. Prod. | NSBC115EPDXV6T1G |
| Cod. LCSC | C895102 |
| Imballo | SOT-563 |
| Numero Cliente | |
| Attr. chiave | 80 357mW 100mA 50V 1 NPN Pre-Biased, 1 PNP Pre-Biased SOT-563 Bipolar Transistor Arrays, Pre-Biased RoHS |
| Scheda Tecnica | onsemi NSBC115EPDXV6T1G |
| Conformità RoHS | 4 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Produttore | onsemi | |
| Imballo | SOT-563 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 130kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 357mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@3mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Produttore | onsemi | |
| Imballo | SOT-563 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Output Voltage(VO(on)) | - |
| Tipo | Descrizione | |
|---|---|---|
| Input Resistor | 130kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 357mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@3mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
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Descrizione
Traduzione AI
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and board space.
Caratteristiche
Traduzione AI
- Simplified circuit design
- Reduced board space
- Reduced component count
- NSV prefix for automotive and other applications requiring unique sourcing and controlled change requirements; AEC-Q101 qualified with PPAP capability
- Lead-free, halogen-free/BFR-free, and RoHS compliant
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Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.0735 | $ 0.07 |
| 200+ | $ 0.0285 | $ 5.70 |
| 500+ | $ 0.0275 | $ 13.75 |
| 1,000+ | $ 0.027 | $ 27.00 |
Package Standard4000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Produttore | onsemi | |
| Imballo | SOT-563 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 130kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 357mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@3mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Produttore | onsemi | |
| Imballo | SOT-563 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Output Voltage(VO(on)) | - |
| Tipo | Descrizione | |
|---|---|---|
| Input Resistor | 130kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 357mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@3mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and board space.
Caratteristiche
Traduzione AI
- Simplified circuit design
- Reduced board space
- Reduced component count
- NSV prefix for automotive and other applications requiring unique sourcing and controlled change requirements; AEC-Q101 qualified with PPAP capability
- Lead-free, halogen-free/BFR-free, and RoHS compliant
C895102 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| EMD4T2R | ROHM | Simili | SOT-563(SOT-666) | 100 | $ 0.068 | ||
| EMD29T2R | ROHM | Simili | SOT-563(SOT-666) | 99 | $ 0.4939 | ||
| PEMD48,115 | Nexperia | Simili | SOT-666-6 | 0 | $ 0.2909 | ||
| RN4988FE,LXHF(CT | TOSHIBA | Simili | SOT-563(SOT-666) | 0 | $ 0.176 | ||
| EMD12T2R | ROHM | Simili | SOT-563(SOT-666) | 0 | $ 0.0414 |