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Modelli EDAEasyEDA
onsemi SMUN5112DW1T1G
| Produttore | |
| Cod. Prod. | SMUN5112DW1T1G |
| Cod. LCSC | C894387 |
| Imballo | SC-88-6 |
| Numero Cliente | |
| Attr. chiave | 60 250mW 100mA 50V 2 PNP Pre-Biased Transistors SC-88-6 Bipolar Transistor Arrays, Pre-Biased RoHS |
| Scheda Tecnica | onsemi SMUN5112DW1T1G |
| Conformità RoHS | 4 documenti disponibili |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Produttore | onsemi | |
| Imballo | SC-88-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Produttore | onsemi | |
| Imballo | SC-88-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - |
| Tipo | Descrizione | |
|---|---|---|
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
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Descrizione
Traduzione AI
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and minimizes board space.
Caratteristiche
Traduzione AI
- S and NSV prefixes for automotive and other applications requiring unique place of origin and change control requirements; AEC-Q101 compliant with PPAP capability
- Simplified circuit design
- Reduced board space
- Reduced component count
- Lead-free, halogen-free/BFR-free, and RoHS compliant
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Esaurito
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Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.0945 | $ 0.09 |
| 200+ | $ 0.0366 | $ 7.32 |
| 500+ | $ 0.0353 | $ 17.65 |
| 1,000+ | $ 0.0347 | $ 34.70 |
Package Standard3000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Produttore | onsemi | |
| Imballo | SC-88-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Produttore | onsemi | |
| Imballo | SC-88-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - |
| Tipo | Descrizione | |
|---|---|---|
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and minimizes board space.
Caratteristiche
Traduzione AI
- S and NSV prefixes for automotive and other applications requiring unique place of origin and change control requirements; AEC-Q101 compliant with PPAP capability
- Simplified circuit design
- Reduced board space
- Reduced component count
- Lead-free, halogen-free/BFR-free, and RoHS compliant
C894387 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |