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onsemi FDMT800100DC
| Fabricante | |
| N.º de pieza fab. | FDMT800100DC |
| Nº LCSC | C891112 |
| Emb. | DualCool-88-8 |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 100V 162A DualCool-88-8 |
| Hoja de Datos | onsemi FDMT800100DC |
| Cumplimiento RoHS | 4 documentos disponibles |
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | DualCool-88-8 | |
| Output Capacitance(Coss) | 1.16nF | |
| Ciss-Input Capacitance | 7.835nF | |
| Pd - Power Dissipation | 156W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 162A | |
| Reverse Transfer Capacitance (Crss) | 75pF | |
| RDS(on) | 2.95mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 79nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | DualCool-88-8 | |
| Output Capacitance(Coss) | 1.16nF | |
| Ciss-Input Capacitance | 7.835nF | |
| Pd - Power Dissipation | 156W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 162A | |
| Reverse Transfer Capacitance (Crss) | 75pF | |
| RDS(on) | 2.95mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 79nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Type | N-Channel |
Descripción
Max ΓDS(on)=2.95 mΩ at VGS = 10 Vs , ΓD = 24 A Max ΓDS(on)=4.46 mΩ at VGS = 6 V , lD = 19 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Low profile 8x8mm MLP package
Características
- Advanced Package and Silicon combination for low rDS(on) and high efficiency
- Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance
- Low profile 8x8mm MLP package
Aplicaciones
- OringFET / Load Switching
- Synchronous Rectification
- DC-DC Conversion
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | DualCool-88-8 | |
| Output Capacitance(Coss) | 1.16nF | |
| Ciss-Input Capacitance | 7.835nF | |
| Pd - Power Dissipation | 156W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 162A | |
| Reverse Transfer Capacitance (Crss) | 75pF | |
| RDS(on) | 2.95mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 79nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | DualCool-88-8 | |
| Output Capacitance(Coss) | 1.16nF | |
| Ciss-Input Capacitance | 7.835nF | |
| Pd - Power Dissipation | 156W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 162A | |
| Reverse Transfer Capacitance (Crss) | 75pF | |
| RDS(on) | 2.95mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 79nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Type | N-Channel |
Descripción
Max ΓDS(on)=2.95 mΩ at VGS = 10 Vs , ΓD = 24 A Max ΓDS(on)=4.46 mΩ at VGS = 6 V , lD = 19 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Low profile 8x8mm MLP package
Características
- Advanced Package and Silicon combination for low rDS(on) and high efficiency
- Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance
- Low profile 8x8mm MLP package
Aplicaciones
- OringFET / Load Switching
- Synchronous Rectification
- DC-DC Conversion
C891112 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |