Infineon S26HS512TGABHV000
| Produttore | |
| Cod. Prod. | S26HS512TGABHV000 |
| Cod. LCSC | C7354872 |
| Imballo | FBGA-24(6x8) |
| Numero Cliente | |
| Attr. chiave | 512Mbit 1.7V~2V 200MHz SPI FBGA-24(6x8) Memory RoHS |
| Scheda Tecnica | Infineon S26HS512TGABHV000 |
| Parti alternative | 16 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | Infineon | |
| Imballo | FBGA-24(6x8) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 1,280,000 Cycles | |
| Clock Frequency | 200MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 1.7ms | |
| Interface | SPI | |
| Standby Supply Current | 11uA |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | Infineon | |
| Imballo | FBGA-24(6x8) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 1,280,000 Cycles |
| Tipo | Descrizione | |
|---|---|---|
| Clock Frequency | 200MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 1.7ms | |
| Interface | SPI | |
| Standby Supply Current | 11uA |
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Caratteristiche
Traduzione AI
- 45nm technology, two bits stored per memory array cell
- Sector architecture options: uniform and hybrid, with two hybrid configurations available
- Page program buffer: 256 or 512 bytes
- 1024-byte one-time programmable Security Silicon Region, organized as 32 × 32 bytes
- HyperBus interface support, JEDEC xSPI compliant, DDR mode up to 400 MB/s, data strobe support for simplified high-speed read data capture
- Legacy single-wire SPI support, JEDEC xSPI compliant, SDR mode up to 21 MB/s
- Default boot from legacy SPI or HyperBus interface
- Functional safety features: ISO 26262 ASIL B compliant with ASIL D support, high endurance and retention sectors, interface CRC, data integrity CRC, secure boot, built-in ECC, and sector erase status indication
- Protection features: advanced sector protection at individual memory array sector level, autoboot for immediate post-power-up memory array access, hardware reset via CS# method and dedicated RESET# pin, SFDP for device capability and feature description, and device/manufacturer identification
- Data integrity: minimum program/erase cycles vary by density for main array; minimum 300,000 program/erase cycles for 4KB sectors across all devices; minimum 25-year data retention
- Operating voltage: 1.7V to 2.0V and 2.7V to 3.6V
- Multiple grades and temperature ranges: industrial, enhanced industrial, and AEC-Q100 compliant automotive grades, covering -40°C to +125°C
- Package options: 256Mb and 512Mb in 24-ball BGA, 6 × 8mm; 1Gb in 24-ball BGA, 8 × 8mm
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Esaurito
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Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 21.0064 | $ 21.01 |
| 338+ | $ 8.3819 | $ 2833.08 |
| 676+ | $ 8.1026 | $ 5477.36 |
| 1,014+ | $ 7.9637 | $ 8075.19 |
Package Standard338/Full Tray | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | Infineon | |
| Imballo | FBGA-24(6x8) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 1,280,000 Cycles | |
| Clock Frequency | 200MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 1.7ms | |
| Interface | SPI | |
| Standby Supply Current | 11uA |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | Infineon | |
| Imballo | FBGA-24(6x8) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 1,280,000 Cycles |
| Tipo | Descrizione | |
|---|---|---|
| Clock Frequency | 200MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 1.7ms | |
| Interface | SPI | |
| Standby Supply Current | 11uA |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- 45nm technology, two bits stored per memory array cell
- Sector architecture options: uniform and hybrid, with two hybrid configurations available
- Page program buffer: 256 or 512 bytes
- 1024-byte one-time programmable Security Silicon Region, organized as 32 × 32 bytes
- HyperBus interface support, JEDEC xSPI compliant, DDR mode up to 400 MB/s, data strobe support for simplified high-speed read data capture
- Legacy single-wire SPI support, JEDEC xSPI compliant, SDR mode up to 21 MB/s
- Default boot from legacy SPI or HyperBus interface
- Functional safety features: ISO 26262 ASIL B compliant with ASIL D support, high endurance and retention sectors, interface CRC, data integrity CRC, secure boot, built-in ECC, and sector erase status indication
- Protection features: advanced sector protection at individual memory array sector level, autoboot for immediate post-power-up memory array access, hardware reset via CS# method and dedicated RESET# pin, SFDP for device capability and feature description, and device/manufacturer identification
- Data integrity: minimum program/erase cycles vary by density for main array; minimum 300,000 program/erase cycles for 4KB sectors across all devices; minimum 25-year data retention
- Operating voltage: 1.7V to 2.0V and 2.7V to 3.6V
- Multiple grades and temperature ranges: industrial, enhanced industrial, and AEC-Q100 compliant automotive grades, covering -40°C to +125°C
- Package options: 256Mb and 512Mb in 24-ball BGA, 6 × 8mm; 1Gb in 24-ball BGA, 8 × 8mm
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| S26HS512TGABHV003 | Infineon | FBGA-24(6x8) | 0 | $ 28.231 | ||
| S26HS512TGABHB000 | Infineon | FBGA-24(6x8) | 0 | $ 23.6059 | ||
| S26HS512TGABHB010 | Infineon | FBGA-24(6x8) | 0 | $ 23.6059 | ||
| S26HS512TGABHV010 | Infineon | FBGA-24(6x8) | 0 | $ 21.0064 | ||
| S26HS512TGABHB003 | Infineon | FBGA-24(6x8) | 0 | $ 38.0366 | ||
| S26HS512TGABHV013 | Infineon | FBGA-24(6x8) | 0 | $ 28.231 | ||
| S26HS512TGABHM003 | Infineon | FBGA-24(6x8) | 0 | $ 15.3773 | ||
| S26HS512TGABHM000 | Infineon | FBGA-24(6x8) | 0 | $ 25.0978 | ||
| S26HS512TGABHM010 | Infineon | FBGA-24(6x8) | 0 | $ 25.0978 | ||
| S28HS512TGABHM013 | Infineon | FBGA-24(6x8) | 0 | $ 34.6467 | ||
| S28HS512TGABHB010 | Infineon | FBGA-24(6x8) | 0 | $ 33.5154 | ||
| S28HS512TGABHV010 | Infineon | FBGA-24(6x8) | 0 | $ 28.431 | ||
| S28HS512TGABHM010 | Infineon | FBGA-24(6x8) | 0 | $ 17.4878 | ||
| S28HS512TGABHB013 | Infineon | FBGA-24(6x8) | 0 | $ 33.2805 | ||
| S28HS512TGABHI013 | Infineon | FBGA-24(6x8) | 0 | $ 24.9767 | ||
| S28HS512TGABHV013 | Infineon | FBGA-24(6x8) | 0 | $ 28.231 |

