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Zdjęcia poglądowe
Modele EDAEasyEDA
Winsok Semicon WST3426
| Producent | Winsok SemiconAsian Brands |
| Nr części prod. | WST3426 |
| Nr LCSC | C719072 |
| Opak. | SOT-23-3L |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 20V 3A SOT-23-3L |
| Karta Katalogowa | Winsok Semicon WST3426 |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Winsok Semicon | |
| Opak. | SOT-23-3L | |
| Output Capacitance(Coss) | 35pF | |
| Ciss-Input Capacitance | 320pF | |
| Pd - Power Dissipation | 1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 22pF | |
| RDS(on) | 60mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 5.4nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 850mV | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Winsok Semicon | |
| Opak. | SOT-23-3L | |
| Output Capacitance(Coss) | 35pF | |
| Ciss-Input Capacitance | 320pF | |
| Pd - Power Dissipation | 1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 22pF | |
| RDS(on) | 60mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 5.4nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 850mV | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The WST3426 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDsON and gate charge for most of the small power switching and load switch applications. The WST3426 meet the RoHS and Green Product requirement with full function reliability approved.
Funkcje
Tłumaczenie AI
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent Cdv/dt effect decline
- Green Device Available
Zastosowania
Tłumaczenie AI
- High Frequency Point-of-Load Synchronous
- Small power switching for MB/NB/UMPC/VGA
- Networking DC-DC Power System
- Load Switch
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 1,440
1,440 W magazynie, wysyłka natychmiastowa
Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 5+ | $ 0.0469$ 0.0423 | $ 0.21 |
| 50+ | $ 0.0373$ 0.0336 | $ 1.68 |
| 150+ | $ 0.0325$ 0.0293 | $ 4.40 |
| 500+ | $ 0.0289$ 0.0261 | $ 13.05 |
| 3,000+ | $ 0.025$ 0.0225 | $ 67.50 |
| 6,000+ | $ 0.0235$ 0.0212 | $ 127.20 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Winsok Semicon | |
| Opak. | SOT-23-3L | |
| Output Capacitance(Coss) | 35pF | |
| Ciss-Input Capacitance | 320pF | |
| Pd - Power Dissipation | 1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 22pF | |
| RDS(on) | 60mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 5.4nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 850mV | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Winsok Semicon | |
| Opak. | SOT-23-3L | |
| Output Capacitance(Coss) | 35pF | |
| Ciss-Input Capacitance | 320pF | |
| Pd - Power Dissipation | 1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 22pF | |
| RDS(on) | 60mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 5.4nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 850mV | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The WST3426 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDsON and gate charge for most of the small power switching and load switch applications. The WST3426 meet the RoHS and Green Product requirement with full function reliability approved.
Funkcje
Tłumaczenie AI
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent Cdv/dt effect decline
- Green Device Available
Zastosowania
Tłumaczenie AI
- High Frequency Point-of-Load Synchronous
- Small power switching for MB/NB/UMPC/VGA
- Networking DC-DC Power System
- Load Switch
C719072 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| WST2300A | Winsok Semicon | Podobne | SOT-23 | 3,320 | $ 0.0342 | ||
| WST2302 | Winsok Semicon | Podobne | SOT-23 | 4,700 | $0.0143 $0.0158 | ||
| WST3420 | Winsok Semicon | Podobne | SOT-23N | 4,550 | $ 0.0449 | ||
| WST2300 | Winsok Semicon | Podobne | SOT-23-3L | 4,900 | $0.0206 $0.0228 | ||
| WST3424 | Winsok Semicon | Podobne | SOT-23 | 220 | $ 0.0502 |