Infineon S25HL01GTDPMHI010
| Producent | |
| Nr części prod. | S25HL01GTDPMHI010 |
| Nr LCSC | C6998415 |
| Opak. | SOIC-16-300mil |
| Numer Klienta | |
| Klucz. cechy | 1Gbit 2.7V~3.6V 166MHz SPI SOIC-16-300mil Memory RoHS |
| Karta Katalogowa | Infineon S25HL01GTDPMHI010 |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Integrated Circuits (ICs)/Memory/Memory | |
| Producent | Infineon | |
| Opak. | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 2,560,000 Cycles | |
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 14uA | |
| Interface | SPI |
| Typ | Opis | |
|---|---|---|
| Kategoria | Integrated Circuits (ICs)/Memory/Memory | |
| Producent | Infineon | |
| Opak. | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 2,560,000 Cycles |
| Typ | Opis | |
|---|---|---|
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 14uA | |
| Interface | SPI |
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Funkcje
Tłumaczenie AI
- Infineon 45nm MIRRORBIT technology, storing two data bits per memory array cell
- Sector architecture options: uniform, hybrid configuration 1, hybrid configuration 2
- Page program buffer: 256 or 512 bytes
- OTP security silicon array: 1024 bytes (32 × 32 bytes)
- Quad SPI: supports 1S-1S-4S, 1S-4S-4S, 1S-4D-4D, 4S-4S-4S, 4S-4D-4D protocols; SDR option up to 83 MBps (166 MHz clock speed); DDR option up to 102 MBps (102 MHz clock speed)
- Dual SPI: supports 1S-2S-2S protocol; SDR option up to 41.5 MBps (166 MHz clock speed)
- SPI: supports 1S-1S-1S protocol; SDR option up to 21 MBps (166 MHz clock speed)
- Functional safety features: functional safety NOR flash compliant with ISO 26262 ASIL B and ASIL D ready; Infineon Endurance Flex architecture provides high endurance and long retention partitions; data integrity CRC detects errors in memory array; SafeBoot reports device initialization failures, detects configuration corruption, and provides recovery options; built-in ECC corrects single-bit errors and detects double-bit errors in memory array data (SECDED); sector erase status indicator for power loss during erase
- Protection features: legacy block protection for memory array and device configuration; advanced sector protection based on individual memory array sectors
- AutoBoot enables immediate memory array access after power-up
- Hardware reset via JEDEC serial flash reset signaling protocol / dedicated RESET# pin / DQ3_RESET# pin
- Serial Flash Discoverable Parameters (SFDP) describe device functions and features
- Device ID, manufacturer ID, and identification
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 28.4368 | $ 28.44 |
| 240+ | $ 11.3478 | $ 2723.47 |
| 480+ | $ 10.9678 | $ 5264.54 |
| 960+ | $ 10.7801 | $ 10348.90 |
Standardowa Obudowa240/Full Tray | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Integrated Circuits (ICs)/Memory/Memory | |
| Producent | Infineon | |
| Opak. | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 2,560,000 Cycles | |
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 14uA | |
| Interface | SPI |
| Typ | Opis | |
|---|---|---|
| Kategoria | Integrated Circuits (ICs)/Memory/Memory | |
| Producent | Infineon | |
| Opak. | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 2,560,000 Cycles |
| Typ | Opis | |
|---|---|---|
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 14uA | |
| Interface | SPI |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Infineon 45nm MIRRORBIT technology, storing two data bits per memory array cell
- Sector architecture options: uniform, hybrid configuration 1, hybrid configuration 2
- Page program buffer: 256 or 512 bytes
- OTP security silicon array: 1024 bytes (32 × 32 bytes)
- Quad SPI: supports 1S-1S-4S, 1S-4S-4S, 1S-4D-4D, 4S-4S-4S, 4S-4D-4D protocols; SDR option up to 83 MBps (166 MHz clock speed); DDR option up to 102 MBps (102 MHz clock speed)
- Dual SPI: supports 1S-2S-2S protocol; SDR option up to 41.5 MBps (166 MHz clock speed)
- SPI: supports 1S-1S-1S protocol; SDR option up to 21 MBps (166 MHz clock speed)
- Functional safety features: functional safety NOR flash compliant with ISO 26262 ASIL B and ASIL D ready; Infineon Endurance Flex architecture provides high endurance and long retention partitions; data integrity CRC detects errors in memory array; SafeBoot reports device initialization failures, detects configuration corruption, and provides recovery options; built-in ECC corrects single-bit errors and detects double-bit errors in memory array data (SECDED); sector erase status indicator for power loss during erase
- Protection features: legacy block protection for memory array and device configuration; advanced sector protection based on individual memory array sectors
- AutoBoot enables immediate memory array access after power-up
- Hardware reset via JEDEC serial flash reset signaling protocol / dedicated RESET# pin / DQ3_RESET# pin
- Serial Flash Discoverable Parameters (SFDP) describe device functions and features
- Device ID, manufacturer ID, and identification
C6998415 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| MX66L1G45GMI-08G | MXIC | Podobne | SOIC-16-300mil | 54 | $ 58.8922 | ||
| MT25QL01GBBB8ESF-0SIT | micron | Podobne | SO-16-300mil | 5 | $ 47.6969 | ||
| S70FL01GSAGMFI013 | Infineon/CYPRESS | Podobne | SOIC-16-300mil | 3 | $ 16.2638 | ||
| W25Q01JVSFIQ | Winbond | Podobne | SOIC-16-300mil | 60 | $ 44.8501 | ||
| S70FL01GSAGMFI011 | Infineon/CYPRESS | Podobne | SOIC-16-300mil | 8 | $ 16.8261 |

