GeneSiC Semiconductor MBRH12060
| Hersteller | |
| Herst.-Teilenr. | MBRH12060 |
| LCSC-Nr. | C6903259 |
| Verp. | - |
| Kundennummer | |
| Hauptmerkm. | 1 Independent 60V 750mV@120A 120A Single Diodes RoHS |
| Datenblatt | GeneSiC Semiconductor MBRH12060 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | - | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Voltage - Forward(Vf@If) | 750mV@120A | |
| Reverse Leakage Current (Ir) | 1mA@60V | |
| Non-Repetitive Peak Forward Surge Current | 2kA | |
| Current - Rectified | 120A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | - | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Voltage - Forward(Vf@If) | 750mV@120A | |
| Reverse Leakage Current (Ir) | 1mA@60V | |
| Non-Repetitive Peak Forward Surge Current | 2kA | |
| Current - Rectified | 120A |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- High surge capability
- VRRM range: 45 V ~ 100 V
- Insensitive to ESD
- D-67 package
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 138.8469 | $ 138.85 |
| 216+ | $ 55.4017 | $ 11966.77 |
| 504+ | $ 53.5493 | $ 26988.85 |
| 1,008+ | $ 52.6351 | $ 53056.18 |
Standardgehäuse36/Full Bag | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | - | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Voltage - Forward(Vf@If) | 750mV@120A | |
| Reverse Leakage Current (Ir) | 1mA@60V | |
| Non-Repetitive Peak Forward Surge Current | 2kA | |
| Current - Rectified | 120A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | - | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Voltage - Forward(Vf@If) | 750mV@120A | |
| Reverse Leakage Current (Ir) | 1mA@60V | |
| Non-Repetitive Peak Forward Surge Current | 2kA | |
| Current - Rectified | 120A |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- High surge capability
- VRRM range: 45 V ~ 100 V
- Insensitive to ESD
- D-67 package
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

