MICROCHIP JANSR2N2222AUB/E10
| Fabricante | |
| N.º de pieza fab. | JANSR2N2222AUB/E10 |
| Nº LCSC | C6884185 |
| Emb. | SMD-3P |
| Número de Cliente | |
| Atrib. clave | 50V 100 800mA 1 NPN NPN SMD-3P Single Bipolar Transistors |
| Hoja de Datos | MICROCHIP JANSR2N2222AUB/E10 |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | MICROCHIP | |
| Emb. | SMD-3P | |
| Current - Collector Cutoff | 50nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 500mW | |
| Current - Collector(Ic) | 800mA | |
| Configuration | - | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | MICROCHIP | |
| Emb. | SMD-3P | |
| Current - Collector Cutoff | 50nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 6V |
| Tipo | Descripción | |
|---|---|---|
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 500mW | |
| Current - Collector(Ic) | 800mA | |
| Configuration | - | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Qualified to MIL-PRF-19500/255
- Linear derating at 3.08 mW/°C for ambient temperature TA > +37.5°C
- Linear derating at 4.76 mW/°C for ambient temperature TA > +63.5°C
- Available in various radiation hardness levels, e.g., JANSM-3K Rads (Si), JANSD-10K Rads (Si)
- Pulse test: pulse width = 300μs, duty cycle ≤ 2.0%
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | MICROCHIP | |
| Emb. | SMD-3P | |
| Current - Collector Cutoff | 50nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 500mW | |
| Current - Collector(Ic) | 800mA | |
| Configuration | - | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | MICROCHIP | |
| Emb. | SMD-3P | |
| Current - Collector Cutoff | 50nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 6V |
| Tipo | Descripción | |
|---|---|---|
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 500mW | |
| Current - Collector(Ic) | 800mA | |
| Configuration | - | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Qualified to MIL-PRF-19500/255
- Linear derating at 3.08 mW/°C for ambient temperature TA > +37.5°C
- Linear derating at 4.76 mW/°C for ambient temperature TA > +63.5°C
- Available in various radiation hardness levels, e.g., JANSM-3K Rads (Si), JANSD-10K Rads (Si)
- Pulse test: pulse width = 300μs, duty cycle ≤ 2.0%
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

