MICROCHIP 2N5410

Fabricante	MICROCHIP
N.º de pieza fab.	2N5410
Nº LCSC	C6803432
Emb.	TO-111
Número de Cliente
Atrib. clave	80V 40~120 5A PNP TO-111 Single Bipolar Transistors
Hoja de Datos	MICROCHIP 2N5410

Especificaciones del Producto

Todo

Tipo	Descripción
Categoría	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Fabricante	MICROCHIP
Emb.	TO-111
Current - Collector Cutoff	-
Operating Temperature	-65℃~+200℃
Transition frequency(fT)	-
Collector - Emitter Voltage VCEO	80V
DC Current Gain	40~120
Emitter-Base Voltage VEBO	6V
Pd - Power Dissipation	52W
Current - Collector(Ic)	5A
Configuration	-
Number	-
type	PNP
Vce Saturation(VCE(sat))	600mV

Tipo	Descripción
Categoría	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Fabricante	MICROCHIP
Emb.	TO-111
Current - Collector Cutoff	-
Operating Temperature	-65℃~+200℃
Transition frequency(fT)	-
Collector - Emitter Voltage VCEO	80V
DC Current Gain	40~120

Garantía en cada pedido

100% Auténtico · Devolución o Reemplazo en 30 Días

Todo

Tipo	Descripción
Categoría	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Fabricante	MICROCHIP
Emb.	TO-111
Current - Collector Cutoff	-
Operating Temperature	-65℃~+200℃
Transition frequency(fT)	-
Collector - Emitter Voltage VCEO	80V
DC Current Gain	40~120
Emitter-Base Voltage VEBO	6V
Pd - Power Dissipation	52W
Current - Collector(Ic)	5A
Configuration	-
Number	-
type	PNP
Vce Saturation(VCE(sat))	600mV

Tipo	Descripción
Categoría	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Fabricante	MICROCHIP
Emb.	TO-111
Current - Collector Cutoff	-
Operating Temperature	-65℃~+200℃
Transition frequency(fT)	-
Collector - Emitter Voltage VCEO	80V
DC Current Gain	40~120