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TOSHIBA TPH2R003PL,LQ

Fabricante
TOSHIBA
N.º de pieza fab.
TPH2R003PL,LQ
Nº LCSC
C6560342
Emb.
SOP-8
Número de Cliente
Atrib. clave
30V 100A 1 N-channel SOP-8 Single FETs, MOSFETs RoHS
Hoja de DatosTOSHIBA TPH2R003PL,LQ
Piezas alternativas5
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días

Especificaciones del Producto

Todo
TipoDescripción
CategoríaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
FabricanteTOSHIBA
Emb.SOP-8
Drain to Source Voltage30V
Current - Continuous Drain(Id)100A
Ciss-Input Capacitance6.41nF
Pd - Power Dissipation830mW;116W
RDS(on)-
Number1 N-channel
Gate Charge(Qg)86nC@10V
Gate Threshold Voltage (Vgs(th))2.1V
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Descripción

Traducción por IA

These N-channel enhancement mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switch-mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topologies.

Características

Traducción por IA
  • High-speed switching
  • Low gate charge: QSW = 22 nC (typical)
  • Low output charge: Qoss = 41 nC (typical)
  • Low drain-source on-resistance: RDS(ON) = 1.3 mΩ (typical) (VGS = 10 V)
  • Low leakage current: IDSS = 10 μA (maximum) (VDS = 30 V)
  • Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 0.5 mA)

Aplicaciones

Traducción por IA
  • High-efficiency DC-DC converter
  • Switching regulator
  • Motor driver