VISHAY 2N6233

Fabricante	VISHAY
N.º de pieza fab.	2N6233
Nº LCSC	C6404404
Emb.	TO-66
Número de Cliente
Atrib. clave	225V 10 5A 1 NPN NPN TO-66 Single Bipolar Transistors
Hoja de Datos	VISHAY 2N6233

Especificaciones del Producto

Todo

Tipo	Descripción
Categoría	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Fabricante	VISHAY
Emb.	TO-66
Current - Collector Cutoff	1mA
Operating Temperature	-65℃~+200℃
Transition frequency(fT)	-
Collector - Emitter Voltage VCEO	225V
Emitter-Base Voltage VEBO	6V
DC Current Gain	10
Pd - Power Dissipation	50W
Current - Collector(Ic)	5A
Configuration	-
Number	1 NPN
type	NPN
Vce Saturation(VCE(sat))	2.5V

Tipo	Descripción
Categoría	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Fabricante	VISHAY
Emb.	TO-66
Current - Collector Cutoff	1mA
Operating Temperature	-65℃~+200℃
Transition frequency(fT)	-
Collector - Emitter Voltage VCEO	225V
Emitter-Base Voltage VEBO	6V

Garantía en cada pedido

100% Auténtico · Devolución o Reemplazo en 30 Días

Todo

Tipo	Descripción
Categoría	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Fabricante	VISHAY
Emb.	TO-66
Current - Collector Cutoff	1mA
Operating Temperature	-65℃~+200℃
Transition frequency(fT)	-
Collector - Emitter Voltage VCEO	225V
Emitter-Base Voltage VEBO	6V
DC Current Gain	10
Pd - Power Dissipation	50W
Current - Collector(Ic)	5A
Configuration	-
Number	1 NPN
type	NPN
Vce Saturation(VCE(sat))	2.5V

Tipo	Descripción
Categoría	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Fabricante	VISHAY
Emb.	TO-66
Current - Collector Cutoff	1mA
Operating Temperature	-65℃~+200℃
Transition frequency(fT)	-
Collector - Emitter Voltage VCEO	225V
Emitter-Base Voltage VEBO	6V