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MICROCHIP TP5322N8-G
| Producent | |
| Nr części prod. | TP5322N8-G |
| Nr LCSC | C629210 |
| Opak. | SOT-89-3 |
| Numer Klienta | |
| Klucz. cechy | 900mW 220V 700mA 2.4V 8Ω@10V 1 P-Channel P-Channel SOT-89-3 Single FETs, MOSFETs RoHS |
| Karta Katalogowa | MICROCHIP TP5322N8-G |
| Zgodność z RoHS | 2 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | MICROCHIP | |
| Opak. | SOT-89-3 | |
| Output Capacitance(Coss) | 45pF | |
| Pd - Power Dissipation | 900mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 220V | |
| Current - Continuous Drain(Id) | 700mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 8Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | MICROCHIP | |
| Opak. | SOT-89-3 | |
| Output Capacitance(Coss) | 45pF | |
| Pd - Power Dissipation | 900mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 220V | |
| Current - Continuous Drain(Id) | 700mA |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 8Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | P-Channel |
Opis
The TP5322 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited for a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Funkcje
- –2.4V Maximum Low Threshold
- High Input Impedance
- 110 pF Maximum Low Input Capacitance
- Fast Switching Speeds
- Low On-Resistance
- Free from Secondary Breakdown
- Low Input and Output Leakage
Zastosowania
- Logic-Level Interfaces (Ideal for TTL and CMOS)
- Battery-Operated Systems
- Photovoltaic Drives
- Analog Switches
- General Purpose Line Drivers
- Telecommunication Switches
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 2.1738 | $ 2.17 |
| 10+ | $ 2.1381 | $ 21.38 |
| 30+ | $ 2.1153 | $ 63.46 |
| 100+ | $ 2.0926 | $ 209.26 |
Standardowa Obudowa2000/Full Reel | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | MICROCHIP | |
| Opak. | SOT-89-3 | |
| Output Capacitance(Coss) | 45pF | |
| Pd - Power Dissipation | 900mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 220V | |
| Current - Continuous Drain(Id) | 700mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 8Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | MICROCHIP | |
| Opak. | SOT-89-3 | |
| Output Capacitance(Coss) | 45pF | |
| Pd - Power Dissipation | 900mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 220V | |
| Current - Continuous Drain(Id) | 700mA |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 8Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | P-Channel |
Opis
The TP5322 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited for a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Funkcje
- –2.4V Maximum Low Threshold
- High Input Impedance
- 110 pF Maximum Low Input Capacitance
- Fast Switching Speeds
- Low On-Resistance
- Free from Secondary Breakdown
- Low Input and Output Leakage
Zastosowania
- Logic-Level Interfaces (Ideal for TTL and CMOS)
- Battery-Operated Systems
- Photovoltaic Drives
- Analog Switches
- General Purpose Line Drivers
- Telecommunication Switches
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| TP2540N8-G | MICROCHIP | Podobne | SOT-89 | 24 | $ 3.3744 | ||
| TP2522N8-G | MICROCHIP | Podobne | SOT-89-3 | 10 | $ 5.7106 | ||
| HSK2P25 | HUASHUO | Podobne | SOT-89 | 275 | $ 0.3566 | ||
| TP2520N8-G | MICROCHIP | Podobne | SOT-89-3 | 2 | $ 5.0673 | ||
| TP2435N8-G | MICROCHIP | Podobne | SOT-89-3 | 0 | $ 4.6643 |