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EDA-ModelleEasyEDA
TOSHIBA TK100E08N1,S1X
| Hersteller | |
| Herst.-Teilenr. | TK100E08N1,S1X |
| LCSC-Nr. | C6284775 |
| Verp. | TO-220 |
| Kundennummer | |
| Hauptmerkm. | 80V 100A 4V 255W 3.2mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS |
| Datenblatt | TOSHIBA TK100E08N1,S1X |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | TO-220 | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 255W | |
| RDS(on) | 3.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 130nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | TO-220 | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 255W | |
| RDS(on) | 3.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 130nC@10V |
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Merkmale
KI-Übersetzung
- Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typical) (VGS = 10 V)
- Low leakage current: IDSS = 10μA (max) (VDS = 80V)
- Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
Anwendungen
KI-Übersetzung
- Switching regulator
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 4.2507 | $ 4.25 |
| 200+ | $ 1.6968 | $ 339.36 |
| 500+ | $ 1.6397 | $ 819.85 |
| 1,000+ | $ 1.6111 | $ 1611.10 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | TO-220 | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 255W | |
| RDS(on) | 3.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 130nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | TO-220 | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 255W | |
| RDS(on) | 3.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 130nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typical) (VGS = 10 V)
- Low leakage current: IDSS = 10μA (max) (VDS = 80V)
- Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
Anwendungen
KI-Übersetzung
- Switching regulator
C6284775 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| TK100E08N1,S1X(S | TOSHIBA | TO-220 | 2,334 | $ 1.6628 | ||
| TK100E10N1,S1X | TOSHIBA | TO-220 | 974 | $ 1.2889 | ||
| TK100E10N1,S1X(S | TOSHIBA | TO-220 | 1,961 | $ 1.6208 | ||
| MPT028N10 | Minos | TO-220 | 86 | $ 0.9822 | ||
| SP85N02BGHTQ | Siliup | TO-220-3L | 217 | $ 1.2104 | ||
| NCEP028N85 | NCE | TO-220 | 217 | $ 1.9967 | ||
| SP85N01BGHTQ | Siliup | TO-220-3L | 190 | $ 1.4963 | ||
| NCEP033N10 | NCE | TO-220 | 0 | $ 1.2895 | ||
| IPP030N10N5 | Infineon | TO-220-3 | 0 | $ 5.2521 | ||
| NCEP040N12 | NCE | TO-220 | 0 | $ 2.2312 |