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MICROCHIP DN3535N8-G
| 제조업체 | |
| 제조사 품번 | DN3535N8-G |
| LCSC 번호 | C616349 |
| 포장 | SOT-89-3 |
| 고객 번호 | |
| 주요 제원 | MOSFET N-CH 350V 200mA SOT-89-3 |
| 데이터시트 | MICROCHIP DN3535N8-G |
| RoHS 준수 | 2개 문서 이용 가능 |
| 대체 부품 | 5 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | MICROCHIP | |
| 포장 | SOT-89-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 350V | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 1.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 10Ω@0V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 360pF | |
| Vgs | ±20V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | MICROCHIP | |
| 포장 | SOT-89-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 350V | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | - |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 1.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 10Ω@0V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 360pF | |
| Vgs | ±20V | |
| Type | N-Channel |
개요
This low threshold depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
주요 특징
- High input impedance
- Low input capacitance
- Fast switching speeds
- Low on-resistance
- Free from secondary breakdown
- Low input and output leakage
응용 분야
- Normally-on switches
- Solid state relays
- Converters
- Linear amplifiers
- Constant current sources
- Power supply circuits
- Telecom
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 1+ | $ 1.6507 | $ 1.65 |
| 10+ | $ 1.623 | $ 16.23 |
| 30+ | $ 1.6052 | $ 48.16 |
| 100+ | $ 1.5873 | $ 158.73 |
표준 패키지2000/Full Reel | ||
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | MICROCHIP | |
| 포장 | SOT-89-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 350V | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 1.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 10Ω@0V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 360pF | |
| Vgs | ±20V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | MICROCHIP | |
| 포장 | SOT-89-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 350V | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | - |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 1.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 10Ω@0V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 360pF | |
| Vgs | ±20V | |
| Type | N-Channel |
개요
This low threshold depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
주요 특징
- High input impedance
- Low input capacitance
- Fast switching speeds
- Low on-resistance
- Free from secondary breakdown
- Low input and output leakage
응용 분야
- Normally-on switches
- Solid state relays
- Converters
- Linear amplifiers
- Constant current sources
- Power supply circuits
- Telecom
C616349 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
대체 부품
| MPN | 제조사 | 대체 유형 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|---|
| DN3545N8-G | MICROCHIP | 유사 제품 | SOT-89-3 | 135 | $ 1.7569 | ||
| DN2450N8-G | MICROCHIP | 유사 제품 | SOT-89-3 | 40 | $ 1.9912 | ||
| TN2435N8-G | MICROCHIP | 유사 제품 | SOT-89-3 | 1 | $ 2.8775 | ||
| CPC3909CTR | Littelfuse/IXYS | 유사 제품 | SOT-89 | 45 | $ 1.1356 | ||
| FTX15N35G | ARK micro | 유사 제품 | SOT-89 | 894 | $0.7428 $0.7818 |