Abbildung ähnlich
EDA-ModelleEasyEDA
onsemi NTMYS1D2N04CLTWG
| Hersteller | |
| Herst.-Teilenr. | NTMYS1D2N04CLTWG |
| LCSC-Nr. | C604465 |
| Verp. | DFN-5(5.9x4.9) |
| Kundennummer | |
| Hauptmerkm. | 134W 40V 258A 1.2V 0.9mΩ@10V 1 N-channel N-Channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS |
| Datenblatt | onsemi NTMYS1D2N04CLTWG |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | DFN-5(5.9x4.9) | |
| Output Capacitance(Coss) | 3nF | |
| Pd - Power Dissipation | 134W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 258A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 118pF | |
| RDS(on) | 0.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.33nF | |
| Gate Charge(Qg) | 52nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | DFN-5(5.9x4.9) | |
| Output Capacitance(Coss) | 3nF | |
| Pd - Power Dissipation | 134W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 258A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 118pF | |
| RDS(on) | 0.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.33nF | |
| Gate Charge(Qg) | 52nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Small package (5x6 mm) for compact designs
- Low on-resistance RDS(on) minimizing conduction losses
- Low gate charge QG and capacitance minimizing switching losses
- LFPAK4 package, industry-standard compliant
- Lead-free, RoHS-compliant devices
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 3.4027 | $ 3.40 |
| 10+ | $ 2.9199 | $ 29.20 |
| 30+ | $ 2.633 | $ 78.99 |
| 100+ | $ 2.343 | $ 234.30 |
| 500+ | $ 2.2088 | $ 1104.40 |
| 1,000+ | $ 2.1487 | $ 2148.70 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | DFN-5(5.9x4.9) | |
| Output Capacitance(Coss) | 3nF | |
| Pd - Power Dissipation | 134W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 258A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 118pF | |
| RDS(on) | 0.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.33nF | |
| Gate Charge(Qg) | 52nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | DFN-5(5.9x4.9) | |
| Output Capacitance(Coss) | 3nF | |
| Pd - Power Dissipation | 134W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 258A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 118pF | |
| RDS(on) | 0.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.33nF | |
| Gate Charge(Qg) | 52nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Small package (5x6 mm) for compact designs
- Low on-resistance RDS(on) minimizing conduction losses
- Low gate charge QG and capacitance minimizing switching losses
- LFPAK4 package, industry-standard compliant
- Lead-free, RoHS-compliant devices
C604465 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| NVMFS5C426NLWFT1G | onsemi | DFN-5(5.9x4.9) | 26 | $ 3.0771 | ||
| NVMFS5C406NLT1G | onsemi | DFN-5(5.9x4.9) | 9 | $ 9.0053 | ||
| NTMFS5C604NLT3G | onsemi | DFN-5(5.9x4.9) | 71 | $ 5.731 | ||
| NVMFS5C604NLT1G | onsemi | DFN-5(5x6) | 9 | $ 14.6736 | ||
| NVMFS5C420NT1G | onsemi | DFN-5(5.9x4.9) | 0 | $ 2.9048 | ||
| NVMFS5C420NWFT1G | onsemi | DFN-5(5.1x6.1) | 0 | $ 4.2647 | ||
| NVMFS5C604NLAFT3G | onsemi | DFN-5(5x6) | 0 | $ 3.6175 | ||
| NVMFS5C604NLWFT1G | onsemi | DFN-5(5.9x4.9) | 0 | $ 4.1594 | ||
| NVMFS5C604NLWFAFT1G | onsemi | DFN-5(5.9x4.9) | 0 | $ 6.3978 | ||
| NTMFS5C410NT3G | onsemi | DFN-5(5.9x4.9) | 0 | $ 2.5543 |