VISHAY SIJA54DP-T1-GE3
| Hersteller | |
| Herst.-Teilenr. | SIJA54DP-T1-GE3 |
| LCSC-Nr. | C5900042 |
| Verp. | PowerPAKSO-8 |
| Kundennummer | |
| Hauptmerkm. | 40V 32.2A 2.4V 4.4W 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS |
| Datenblatt | VISHAY SIJA54DP-T1-GE3 |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | PowerPAKSO-8 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 32.2A | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 4.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.3nF | |
| Gate Charge(Qg) | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | PowerPAKSO-8 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 32.2A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 4.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.3nF | |
| Gate Charge(Qg) | - |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- TrenchFET 4th generation power MOSFET
- Optimized for lowest R<sub>DS</sub> - Q<sub>oss</sub> figure of merit
- 100% R<sub>q</sub> and UIS tested
- Q<sub>gd</sub>/Q<sub>gs</sub> ratio < 1, optimized switching characteristics
Anwendungen
KI-Übersetzung
- Synchronous rectification
- OR-ing diode
- High power density DC/DC
- Voltage Regulator Module (VRM) and embedded DC/DC
- DC/AC inverter
- Load switch
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.0956 | $ 1.10 |
| 200+ | $ 0.438 | $ 87.60 |
| 500+ | $ 0.4228 | $ 211.40 |
| 1,000+ | $ 0.4152 | $ 415.20 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | PowerPAKSO-8 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 32.2A | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 4.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.3nF | |
| Gate Charge(Qg) | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | PowerPAKSO-8 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 32.2A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 4.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.3nF | |
| Gate Charge(Qg) | - |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- TrenchFET 4th generation power MOSFET
- Optimized for lowest R<sub>DS</sub> - Q<sub>oss</sub> figure of merit
- 100% R<sub>q</sub> and UIS tested
- Q<sub>gd</sub>/Q<sub>gs</sub> ratio < 1, optimized switching characteristics
Anwendungen
KI-Übersetzung
- Synchronous rectification
- OR-ing diode
- High power density DC/DC
- Voltage Regulator Module (VRM) and embedded DC/DC
- DC/AC inverter
- Load switch
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| AON6240 | AOS | Ähnliche | PDFN-8(5.8x4.9) | 100 | $ 1.1837 | ||
| HSBA6074B | HUASHUO | Ähnliche | PRPAK5x6-8L | 102 | $ 1.2868 | ||
| CMSA013N04L | Cmos | Ähnliche | DFN-8(5x6) | 130 | $0.5294 $0.5572 | ||
| AUN050N08BGL | ANHI | Ähnliche | DFN5x6-8 | 2,342 | $ 0.4605 | ||
| HSBA6074 | HUASHUO | Ähnliche | PRPAK5x6-8L | 1,382 | $ 0.7886 |
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