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Modele EDAEasyEDA
Littelfuse IXFQ26N50P3
| Producent | |
| Nr części prod. | IXFQ26N50P3 |
| Nr LCSC | C5773256 |
| Opak. | TO-3P |
| Numer Klienta | |
| Klucz. cechy | 500V 26A 500W 250mΩ@10V 1 N-channel N-Channel TO-3P Single FETs, MOSFETs RoHS |
| Karta Katalogowa | Littelfuse IXFQ26N50P3 |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Littelfuse | |
| Opak. | TO-3P | |
| Drain to Source Voltage | 500V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 280pF | |
| Current - Continuous Drain(Id) | 26A | |
| Ciss-Input Capacitance | 2.22nF | |
| Pd - Power Dissipation | 500W | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 250mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 42nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Littelfuse | |
| Opak. | TO-3P | |
| Drain to Source Voltage | 500V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 280pF | |
| Current - Continuous Drain(Id) | 26A | |
| Ciss-Input Capacitance | 2.22nF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 500W | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 250mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 42nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
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Opis
Tłumaczenie AI
These P-channel enhancement mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This advanced technology is specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switching DC/DC converters.
Funkcje
Tłumaczenie AI
- Fast intrinsic rectifier
- Avalanche rated
- Low RDS(ON) and QG
- Low package inductance
- High power density
- Easy to install
- Space-saving
Zastosowania
Tłumaczenie AI
- Switched-mode and resonant-mode power supplies
- DC-DC converters
- Laser drivers
- AC and DC motor drivers
- Robotics and servo control
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
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Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 1.4116 | $ 1.41 |
| 210+ | $ 0.5644 | $ 118.52 |
| 510+ | $ 0.5459 | $ 278.41 |
| 990+ | $ 0.5351 | $ 529.75 |
Standardowa Obudowa30/Full Tube | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Littelfuse | |
| Opak. | TO-3P | |
| Drain to Source Voltage | 500V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 280pF | |
| Current - Continuous Drain(Id) | 26A | |
| Ciss-Input Capacitance | 2.22nF | |
| Pd - Power Dissipation | 500W | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 250mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 42nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Littelfuse | |
| Opak. | TO-3P | |
| Drain to Source Voltage | 500V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 280pF | |
| Current - Continuous Drain(Id) | 26A | |
| Ciss-Input Capacitance | 2.22nF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 500W | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 250mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 42nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
These P-channel enhancement mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This advanced technology is specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switching DC/DC converters.
Funkcje
Tłumaczenie AI
- Fast intrinsic rectifier
- Avalanche rated
- Low RDS(ON) and QG
- Low package inductance
- High power density
- Easy to install
- Space-saving
Zastosowania
Tłumaczenie AI
- Switched-mode and resonant-mode power supplies
- DC-DC converters
- Laser drivers
- AC and DC motor drivers
- Robotics and servo control
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| IXTQ460P2 | Littelfuse/IXYS | Podobne | TO-3P-3 | 354 | $ 4.1083 | ||
| TSA35N50M | Truesemi | Podobne | TO-3P | 9 | $1.6550 $1.8388 | ||
| FQA28N50 | onsemi | Podobne | TO-3P-3 | 104 | $ 4.9901 | ||
| IXTQ44N50P | Littelfuse/IXYS | Podobne | TO-3P-3 | 5 | $ 26.1008 | ||
| MOT28N50Q | MOT | Podobne | TO-3PB | 570 | $ 1.0047 |