AOS AOB29S50L
| Produttore | |
| Cod. Prod. | AOB29S50L |
| Cod. LCSC | C5587752 |
| Imballo | TO-263(D2PAK) |
| Numero Cliente | |
| Attr. chiave | 500V 29A 3.9V 150mΩ@10V 1 N-channel TO-263(D2PAK) Single FETs, MOSFETs RoHS |
| Scheda Tecnica | AOS AOB29S50L |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AOS | |
| Imballo | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 29A | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Pd - Power Dissipation | - | |
| RDS(on) | 150mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.312nF | |
| Gate Charge(Qg) | 26.6nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AOS | |
| Imballo | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 29A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Pd - Power Dissipation | - | |
| RDS(on) | 150mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.312nF | |
| Gate Charge(Qg) | 26.6nC@10V |
Descrizione
AOT29S50L, AOB29S50L, AOTF29S50L, and AOTF29S50 are manufactured using an advanced αMOS high-voltage process, designed to deliver high performance and high reliability for switching applications. These devices feature low on-resistance RDS(on), low gate charge Qg, and low output capacitance energy EOSS, with guaranteed avalanche capability, enabling rapid adoption in new and existing off-line power supply designs.
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 3.7952 | $ 3.80 |
| 200+ | $ 1.5143 | $ 302.86 |
| 500+ | $ 1.4651 | $ 732.55 |
| 800+ | $ 1.4397 | $ 1151.76 |
Package Standard800/Full Reel | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AOS | |
| Imballo | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 29A | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Pd - Power Dissipation | - | |
| RDS(on) | 150mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.312nF | |
| Gate Charge(Qg) | 26.6nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AOS | |
| Imballo | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 29A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Pd - Power Dissipation | - | |
| RDS(on) | 150mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.312nF | |
| Gate Charge(Qg) | 26.6nC@10V |
Descrizione
AOT29S50L, AOB29S50L, AOTF29S50L, and AOTF29S50 are manufactured using an advanced αMOS high-voltage process, designed to deliver high performance and high reliability for switching applications. These devices feature low on-resistance RDS(on), low gate charge Qg, and low output capacitance energy EOSS, with guaranteed avalanche capability, enabling rapid adoption in new and existing off-line power supply designs.
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| MS30N90ICE0 | MASPOWER | TO-263 | 56 | $ 4.2724 | ||
| SIHB30N60E-GE3 | VISHAY | D2PAK(TO-263) | 10 | $ 6.7958 | ||
| TP65H050G4BS | Transphorm | TO-263 | 0 | $ 20.4899 | ||
| SIHB30N60ET5-GE3 | VISHAY | D2PAK(TO-263) | 0 | $ 7.5174 | ||
| SIHB30N60ET1-GE3 | VISHAY | D2PAK(TO-263) | 0 | $ 7.5174 | ||
| VBL15R30S | VBsemi Elec | TO-263 | 0 | $ 4.0027 | ||
| SIHB33N60ET5-GE3 | VISHAY | D2PAK(TO-263) | 0 | $ 7.7808 | ||
| SIHB33N60E-GE3 | VISHAY | TO-263-2 | 0 | $ 6.6977 | ||
| SIHB35N60E-GE3 | VISHAY | D2PAK(TO-263) | 0 | $ 4.1908 | ||
| SIHB35N60EF-GE3 | VISHAY | D2PAK(TO-263) | 0 | $ 4.2262 |