Abbildung ähnlich
EDA-ModelleEasyEDA
Nexperia PDTC124EMB,315
| Hersteller | |
| Herst.-Teilenr. | PDTC124EMB,315 |
| LCSC-Nr. | C552190 |
| Verp. | SOT-883-3 |
| Kundennummer | |
| Hauptmerkm. | 50V 60 100mA 250mW 1 NPN (Pre-Biased) NPN SOT-883-3 Single, Pre-Biased Bipolar Transistors RoHS |
| Datenblatt | Nexperia PDTC124EMB,315 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 9 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 230MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 60 | |
| Emitter-Base Voltage VEBO | 10V | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V@5mA,0.3V | |
| Operating temperature | -65℃~+150℃ | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 230MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 60 | |
| Emitter-Base Voltage VEBO | 10V | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V@5mA,0.3V | |
| Operating temperature | -65℃~+150℃ | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
NPN resistor-equipped transistor (RET) in a leadless ultra-compact DFN1006B-3 (SOT883B) SMD plastic package. PNP complementary type: PDTA124EMB.
Merkmale
KI-Übersetzung
- Output current capability up to 100 mA
- Reduced component count
- Built-in bias resistors
- Lower assembly cost
- Simplified circuit design
- AEC-Q101 qualified
- Leadless ultra-compact SMD plastic package
- Package height as low as 0.37 mm
Anwendungen
KI-Übersetzung
- Low-current peripheral driver
- Control IC input
- General-purpose transistor replacement in digital applications
- Mobile applications
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.0175 | $ 0.02 |
| 10+ | $ 0.0137 | $ 0.14 |
| 30+ | $ 0.0116 | $ 0.35 |
| 100+ | $ 0.0103 | $ 1.03 |
| 500+ | $ 0.0092 | $ 4.60 |
| 1,000+ | $ 0.0086 | $ 8.60 |
Standardgehäuse10000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 230MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 60 | |
| Emitter-Base Voltage VEBO | 10V | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V@5mA,0.3V | |
| Operating temperature | -65℃~+150℃ | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 230MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 60 | |
| Emitter-Base Voltage VEBO | 10V | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V@5mA,0.3V | |
| Operating temperature | -65℃~+150℃ | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
NPN resistor-equipped transistor (RET) in a leadless ultra-compact DFN1006B-3 (SOT883B) SMD plastic package. PNP complementary type: PDTA124EMB.
Merkmale
KI-Übersetzung
- Output current capability up to 100 mA
- Reduced component count
- Built-in bias resistors
- Lower assembly cost
- Simplified circuit design
- AEC-Q101 qualified
- Leadless ultra-compact SMD plastic package
- Package height as low as 0.37 mm
Anwendungen
KI-Übersetzung
- Low-current peripheral driver
- Control IC input
- General-purpose transistor replacement in digital applications
- Mobile applications
C552190 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| PDTC114EMB,315 | Nexperia | SOT-883-3 | 9,980 | $ 0.0386 | ||
| PDTC143EM,315 | Nexperia | SOT-883-3 | 9,880 | $ 0.0605 | ||
| PDTC124XMB,315 | Nexperia | SOT-883-3 | 10,000 | $ 0.7244 | ||
| PDTC114YM,315 | Nexperia | SOT-883-3 | 9,550 | $ 0.056 | ||
| DTC143EDC | PJSEMI | DFN-3L(1x0.6) | 6,340 | $0.0190 $0.0316 | ||
| NSBC124EF3T5G | onsemi | SOT-1123 | 0 | $ 0.2028 | ||
| PDTC123EMB,315 | Nexperia | SOT-883-3 | 0 | $ 0.016 | ||
| PDTC123EM,315 | Nexperia | SOT-883-3 | 0 | $ 0.0175 | ||
| PDTC114YMB,315 | Nexperia | SOT-883-3 | 0 | $ 0.0308 |