Abbildung ähnlich
EDA-ModelleEasyEDA
Infineon IRFS4321TRRPBF
| Hersteller | |
| Herst.-Teilenr. | IRFS4321TRRPBF |
| LCSC-Nr. | C538020 |
| Verp. | D2PAK |
| Kundennummer | |
| Hauptmerkm. | 350W 150V 85A 5V 15mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS |
| Datenblatt | Infineon IRFS4321TRRPBF |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | D2PAK | |
| Output Capacitance(Coss) | 390pF | |
| Pd - Power Dissipation | 350W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 85A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 82pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.46nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | D2PAK | |
| Output Capacitance(Coss) | 390pF | |
| Pd - Power Dissipation | 350W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 85A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 82pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.46nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low RDson Reduces Losses
- Low Gate Charge Improves the Switching Performance
- Improved Diode Recovery Improves Switching & EMI Performance
- 30V Gate Voltage Rating Improves Robustness
- Fully Characterized Avalanche SOA
Anwendungen
KI-Übersetzung
- Motion Control Applications
- High Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- Hard Switched and High Frequency Circuits
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Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 2.8815 | $ 2.88 |
| 200+ | $ 1.1161 | $ 223.22 |
| 500+ | $ 1.0762 | $ 538.10 |
| 800+ | $ 1.0578 | $ 846.24 |
Standardgehäuse800/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | D2PAK | |
| Output Capacitance(Coss) | 390pF | |
| Pd - Power Dissipation | 350W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 85A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 82pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.46nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | D2PAK | |
| Output Capacitance(Coss) | 390pF | |
| Pd - Power Dissipation | 350W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 85A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 82pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.46nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low RDson Reduces Losses
- Low Gate Charge Improves the Switching Performance
- Improved Diode Recovery Improves Switching & EMI Performance
- 30V Gate Voltage Rating Improves Robustness
- Fully Characterized Avalanche SOA
Anwendungen
KI-Übersetzung
- Motion Control Applications
- High Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- Hard Switched and High Frequency Circuits
C538020 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| IRFS4321TRLPBF | Infineon | Ähnliche | D2PAK | 564 | $ 2.6168 | ||
| KNB2915A | KIA Semicon Tech | Ähnliche | TO-263 | 495 | $ 1.0806 | ||
| IRFS4321TRLPBF-VB | VBsemi Elec | Ähnliche | TO-263(D2PAK) | 6 | $2.1369 $2.514 | ||
| FDB075N15A-VB | VBsemi Elec | Ähnliche | TO-263(D2PAK) | 10 | $1.9862 $2.3367 | ||
| HY3215B | HUAYI | Ähnliche | TO-263-2L | 946 | $ 1.4452 |
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