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Infineon IPW60R018CFD7
| Produttore | |
| Cod. Prod. | IPW60R018CFD7 |
| Cod. LCSC | C537443 |
| Imballo | TO-247-3 |
| Numero Cliente | |
| Attr. chiave | 416W 650V 64A 3.5V 18mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS |
| Scheda Tecnica | Infineon IPW60R018CFD7 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Output Capacitance(Coss) | 196pF | |
| Pd - Power Dissipation | 416W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 64A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.73nF | |
| RDS(on) | 18mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.901nF | |
| Gate Charge(Qg) | 251nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Output Capacitance(Coss) | 196pF | |
| Pd - Power Dissipation | 416W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 64A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.73nF | |
| RDS(on) | 18mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.901nF | |
| Gate Charge(Qg) | 251nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Descrizione
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series, a platform specifically optimized for soft-switching applications such as phase-shifted full-bridge (ZVS) and LLC. With reduced gate charge (Qg), best-in-class reverse recovery charge (Qrr), and improved turn-off characteristics, CoolMOS CFD7 delivers the highest efficiency in resonant topologies. As part of Infineon's fast body diode portfolio, this new product series combines all the advantages of fast switching with outstanding hard-commutation robustness, without compromising ease of implementation during design-in. CoolMOS CFD7 technology meets the highest standards of efficiency and reliability while enabling high power density solutions. Overall, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter, and cooler.
Caratteristiche
- Ultra-fast body diode
- Low gate charge
- Best-in-class reverse recovery charge (Qrr)
- Improved dv/dt and diF/dt robustness of MOSFET body diode
- Lowest figure-of-merit RDS(ON)*Qg and RDS(ON)*Eoss
- Best-in-class RDS(ON) in SMD and THD packages
Applicazioni
- Soft-switching topology
- Phase-shifted full bridge (ZVS), LLC applications — servers, telecom, EV charging
- Industrial applications
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 13.0799 | $ 13.08 |
| 10+ | $ 12.0125 | $ 120.13 |
| 30+ | $ 11.361 | $ 340.83 |
| 90+ | $ 10.8152 | $ 973.37 |
Package Standard30/Full Tube | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Output Capacitance(Coss) | 196pF | |
| Pd - Power Dissipation | 416W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 64A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.73nF | |
| RDS(on) | 18mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.901nF | |
| Gate Charge(Qg) | 251nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Output Capacitance(Coss) | 196pF | |
| Pd - Power Dissipation | 416W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 64A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.73nF | |
| RDS(on) | 18mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.901nF | |
| Gate Charge(Qg) | 251nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Descrizione
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series, a platform specifically optimized for soft-switching applications such as phase-shifted full-bridge (ZVS) and LLC. With reduced gate charge (Qg), best-in-class reverse recovery charge (Qrr), and improved turn-off characteristics, CoolMOS CFD7 delivers the highest efficiency in resonant topologies. As part of Infineon's fast body diode portfolio, this new product series combines all the advantages of fast switching with outstanding hard-commutation robustness, without compromising ease of implementation during design-in. CoolMOS CFD7 technology meets the highest standards of efficiency and reliability while enabling high power density solutions. Overall, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter, and cooler.
Caratteristiche
- Ultra-fast body diode
- Low gate charge
- Best-in-class reverse recovery charge (Qrr)
- Improved dv/dt and diF/dt robustness of MOSFET body diode
- Lowest figure-of-merit RDS(ON)*Qg and RDS(ON)*Eoss
- Best-in-class RDS(ON) in SMD and THD packages
Applicazioni
- Soft-switching topology
- Phase-shifted full bridge (ZVS), LLC applications — servers, telecom, EV charging
- Industrial applications
C537443 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| IPW65R019C7 | Infineon | TO-247 | 4 | $ 27.8705 | ||
| IPW65R018CFD7XKSA1 | Infineon | TO-247-3 | 6 | $ 28.353 | ||
| IPW95R060PFD7XKSA1 | Infineon | TO-247-3-41 | 2 | $ 13.6331 | ||
| STW88N65M5 | ST | TO-247 | 203 | $ 9.2101 | ||
| STWA88N65M5 | ST | TO-247 | 1 | $ 15.6731 | ||
| SP78MF65TF | Siliup | TO-247 | 71 | $4.0780 $5.0975 | ||
| NTHL019N65S3H | onsemi | TO-247 | 2 | $ 28.7234 | ||
| SP005547003 | Infineon | TO-247-3 | 3 | $ 44.7519 | ||
| X40N65JEFHA3 | XYD | TO-247-3L | 0 | $ 9.1381 | ||
| STW77N65M5 | ST | TO-247-3 | 0 | $ 37.1162 |