Infineon IFS200B12N3E4_B31

Hersteller	Infineon
Herst.-Teilenr.	IFS200B12N3E4_B31
LCSC-Nr.	C535995
Verp.	-
Kundennummer
Hauptmerkm.	940W 200A 1.2kV FS (Field Stop) IGBT Modules RoHS
Datenblatt	Infineon IFS200B12N3E4_B31
RoHS-Konformität	1 Dokumente verfügbar

Produktspezifikationen

Alle

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Hersteller	Infineon
Verp.	-
Pd - Power Dissipation	940W
Td(off)	320ns
Td(on)	140ns
Current - Collector(Ic)	200A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	500pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.8V
Gate Charge(Qg)	1.65uC@15V
Vce Saturation(VCE(sat))	1.75V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	15.5mJ
Turn-On Energy (Eon)	13mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	14nF
Output Capacitance(Coes)	-

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Hersteller	Infineon
Verp.	-
Pd - Power Dissipation	940W
Td(off)	320ns
Td(on)	140ns
Current - Collector(Ic)	200A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	500pF
IGBT Type	FS (Field Stop)

Typ	Beschreibung
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.8V
Gate Charge(Qg)	1.65uC@15V
Vce Saturation(VCE(sat))	1.75V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	15.5mJ
Turn-On Energy (Eon)	13mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	14nF
Output Capacitance(Coes)	-

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Alle

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Hersteller	Infineon
Verp.	-
Pd - Power Dissipation	940W
Td(off)	320ns
Td(on)	140ns
Current - Collector(Ic)	200A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	500pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.8V
Gate Charge(Qg)	1.65uC@15V
Vce Saturation(VCE(sat))	1.75V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	15.5mJ
Turn-On Energy (Eon)	13mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	14nF
Output Capacitance(Coes)	-

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Hersteller	Infineon
Verp.	-
Pd - Power Dissipation	940W
Td(off)	320ns
Td(on)	140ns
Current - Collector(Ic)	200A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	500pF
IGBT Type	FS (Field Stop)

Typ	Beschreibung
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.8V
Gate Charge(Qg)	1.65uC@15V
Vce Saturation(VCE(sat))	1.75V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	15.5mJ
Turn-On Energy (Eon)	13mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	14nF
Output Capacitance(Coes)	-