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HXY MOSFET IDT10S60C-HXY
| Producent | HXY MOSFETAsian Brands |
| Nr części prod. | IDT10S60C-HXY |
| Nr LCSC | C53468131 |
| Opak. | TO-220C-2L |
| Numer Klienta | |
| Klucz. cechy | 1 Independent 650V 1.5V@10A 30A TO-220C-2L Single Diodes |
| Karta Katalogowa | HXY MOSFET IDT10S60C-HXY |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | HXY MOSFET | |
| Opak. | TO-220C-2L | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.5V@10A | |
| Reverse Leakage Current (Ir) | 60uA@650V | |
| Current - Rectified | 30A | |
| Non-Repetitive Peak Forward Surge Current | 90A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | HXY MOSFET | |
| Opak. | TO-220C-2L | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Typ | Opis | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.5V@10A | |
| Reverse Leakage Current (Ir) | 60uA@650V | |
| Current - Rectified | 30A | |
| Non-Repetitive Peak Forward Surge Current | 90A |
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Funkcje
Tłumaczenie AI
- 650V Schottky rectifier
- Zero reverse recovery current
- Zero forward recovery voltage
- High-frequency operation
- Temperature-independent switching characteristics
- Extremely fast switching speed
- Positive temperature coefficient of forward voltage VF
- Replaces bipolar rectifiers with unipolar rectifiers
- Virtually no switching losses
- Higher efficiency
- Reduced heatsink requirements
- No thermal runaway in paralleled devices
Zastosowania
Tłumaczenie AI
- Switch-mode power supplies
- Power factor correction
- Motor drives
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 25
25 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 4.281$ 3.4248 | $ 3.42 |
| 10+ | $ 3.6736$ 2.9389 | $ 29.39 |
| 50+ | $ 3.3124$ 2.6500 | $ 132.50 |
| 100+ | $ 2.9479$ 2.3584 | $ 235.84 |
| 500+ | $ 2.7795$ 2.2236 | $ 1111.80 |
| 1,000+ | $ 2.7034$ 2.1628 | $ 2162.80 |
Standardowa Obudowa50/Full Tube | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | HXY MOSFET | |
| Opak. | TO-220C-2L | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.5V@10A | |
| Reverse Leakage Current (Ir) | 60uA@650V | |
| Current - Rectified | 30A | |
| Non-Repetitive Peak Forward Surge Current | 90A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | HXY MOSFET | |
| Opak. | TO-220C-2L | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Typ | Opis | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.5V@10A | |
| Reverse Leakage Current (Ir) | 60uA@650V | |
| Current - Rectified | 30A | |
| Non-Repetitive Peak Forward Surge Current | 90A |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- 650V Schottky rectifier
- Zero reverse recovery current
- Zero forward recovery voltage
- High-frequency operation
- Temperature-independent switching characteristics
- Extremely fast switching speed
- Positive temperature coefficient of forward voltage VF
- Replaces bipolar rectifiers with unipolar rectifiers
- Virtually no switching losses
- Higher efficiency
- Reduced heatsink requirements
- No thermal runaway in paralleled devices
Zastosowania
Tłumaczenie AI
- Switch-mode power supplies
- Power factor correction
- Motor drives
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Typ | Szczegóły |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| SIT10C065-HXY | HXY MOSFET | Podobne | TO-220C-2L | 17 | $1.5356 $1.9194 | ||
| WNSC2D10650Q-HXY | HXY MOSFET | Podobne | TO-220C-2L | 23 | $1.3503 $1.6878 | ||
| NXPSC10650Q-HXY | HXY MOSFET | Podobne | TO-220C-2L | 25 | $2.6914 $3.3642 | ||
| IDH10S60CAKSA1-HXY | HXY MOSFET | Podobne | TO-220C-2L | 20 | $4.2321 $5.2901 | ||
| SDT10S60-HXY | HXY MOSFET | Podobne | TO-220C-2L | 24 | $1.5926 $1.9907 |