R+O SP10200
| Fabricante | R+OAsian Brands |
| N.º de pieza fab. | SP10200 |
| Nº LCSC | C53329066 |
| Emb. | TO-277 |
| Número de Cliente | |
| Atrib. clave | 1 Independent 200V 850mV@10A 10A TO-277 Single Diodes |
| Hoja de Datos | R+O SP10200 |
| Piezas alternativas | 3 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | R+O | |
| Emb. | TO-277 | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 850mV@10A | |
| Reverse Leakage Current (Ir) | 30uA@200V | |
| Non-Repetitive Peak Forward Surge Current | 250A | |
| Current - Rectified | 10A |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | R+O | |
| Emb. | TO-277 | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 850mV@10A | |
| Reverse Leakage Current (Ir) | 30uA@200V | |
| Non-Repetitive Peak Forward Surge Current | 250A | |
| Current - Rectified | 10A |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Excellent high-temperature stability
- Metal-silicon junction, majority carrier conduction
- Ultra-low forward voltage drop, low power dissipation
- High forward surge current capability
Aplicaciones
Traducción por IA
For use in low-voltage, high-frequency inverter, freewheeling, and polarity protection applications.
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | R+O | |
| Emb. | TO-277 | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 850mV@10A | |
| Reverse Leakage Current (Ir) | 30uA@200V | |
| Non-Repetitive Peak Forward Surge Current | 250A | |
| Current - Rectified | 10A |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | R+O | |
| Emb. | TO-277 | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 850mV@10A | |
| Reverse Leakage Current (Ir) | 30uA@200V | |
| Non-Repetitive Peak Forward Surge Current | 250A | |
| Current - Rectified | 10A |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Excellent high-temperature stability
- Metal-silicon junction, majority carrier conduction
- Ultra-low forward voltage drop, low power dissipation
- High forward surge current capability
Aplicaciones
Traducción por IA
For use in low-voltage, high-frequency inverter, freewheeling, and polarity protection applications.
C53329066 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |



